0.7mm
2
PCB footprint
30% smaller footprint than SOT723
60% smaller footprint than SOT563
80% smaller footprint than SOT363
Off board profile of 0.5mm
Meets the requirement of ultra thin portable applications
Leaded package
Enables hand soldering
No need for Xray inspection
The Diodes advantage
www.diodes.com
Diodes’ has expanded its
discrete product portfolio
offering with the introduction
of bipolar transistors, MOSFETs
and TVS packaged in the ultra
small SOT963.
With a footprint of just 1mm by
0.7mm the SOT963 occupies a
PCB footprint that is 30%
smaller than SOT723 and 60
percent smaller than that of
SOT563.
Designed for low power
applications, the SOT963 has
an off board height of 0.5mm,
satisfying the requirements of
new generation ultra-thin
handheld portable devices.
The new SOT963 portfolio
comprises 6 general purpose
dual bipolar transistors, 3 dual
small signal MOSFETs and 1
transient voltage suppressor –
the DUP412VP5 packaged in
the 5 pin SOT953 variant.
The bipolar portfolio provides
designers with industry
standard performance of
devices such as the BC857
series delivered from a much
smaller footprint.
Similarly, the MOSFET portfolio
features dual N, P and
complementary devices with
RDS(ON) rated down to 1.5V
whilst the DUP412VP5 is a
quad transient overvoltage
protection array that provides
an equivalent performance to
competing solutions.
New Product
Announcement
Various power management and protection functions
Circuit functions
Diodes launches miniature SOT963 packaged
devices for ultra portable electronics
SOT963
Issue Number | 001
June 2010
www.diodes.com
SOT963 MOSFET product porfolio
New Product
Announcement
Diodes launches miniature SOT963 packaged
devices for ultra portable electronics
Part No Configuration
V
DS
(V)
V
GS
(±V)
I
D
(A) @
25
o
C
V
GS(th)
(V)
R
DS(ON)
(mΩ max) at V
GSS
=
C
iss
typ.
(pF)mx
V
GS
=4.5V V
GS
=2.5V V
GS
=1.8V V
GS
=1.5V
DMN26D0UDJ Dual N 20 10 0.18 0.5 to 1 3 4 6 10 14
DMP26D0UDJ* Dual P -20 10 -0.14 -05 to 1 5 7 10 15 13
DMC26D0UDJ*
Complementary
dual
20
8
0.18 0.5 to 1 3 4 6 10 14
-20 0.14 -05 to 1 5 7 10 15 13
SOT963 Bipolar transistor portfolio
Part No Device type
V
CEO
I
C
P
D
h
FE
I
C
V
CE(SAT)
I
c
/I
b
f
T
V A W min mA Max mV mA MHz
DST847BDJ Dual NPN 45 0.1 0.3 200 2 300 100/5 170
DST857BDJ Dual PNP -45 -0.1 0.3 200 -2 -500 -100/-5 340
DST847BPDP6 NPN + PNP
45 0.1 0.3 200 2 300 100/5 170
-45 -0.1 0.3 200 -2 -500 -100/-5 340
DST3904DJ Dual NPN 40 0.2 0.3 30 100 300 50/5 300
DST3906DJ Dual PNP -40 -0.2 0.3 30 -100 -400 -50/-5 300
DST3946DPJ NPN +PNP
40 0.2 0.3 30 100 300 50/5 300
-40 -0.2 0.3 30 -100 -400 -50/-5 300
Part No
Breakdown Voltage
Leakage Current
Capacitance @0V
Bias (pF)
Capacitance @3V Bias (pF)
V
BR
@ I
T
=5mA I
RM
@ V
RM
9V C
T
C
T
DUP412VP5
Min (V) Max (V) Max (μA) Max Max
11.4 12.7 0.5 10 5
SOT963
SOT953 TVS portfolio
Issue Number | 001
June 2010
* Release scheduled for July 2010