Vishay Siliconix
Si8900EDB
Document Number: 71830
S-82119-Rev. G, 08-Sep-08
www.vishay.com
1
Bi-Directional N-Channel 20-V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• Ultra-Low R
SS(on)
• ESD Protected: 4000 V
• MICRO FOOT
®
Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm)
and On-Resistance Per Footprint Area
APPLICATIONS
• Battery Protection Circuit
- 1-2 Cell Li+/LiP Battery Pack for Portable Devices
PRODUCT SUMMARY
V
S1S2
(V) R
S1S2(on)
(Ω)I
S1S2
(A)
20
0.024 at V
GS
= 4.5 V
7
0.026 at V
GS
= 3.7 V
6.8
0.034 at V
GS
= 2.5 V
5.0
0.040 at V
GS
= 1.8 V
5.5
MICRO FOOT
Device Marking:
8900E = P/N Code
xxx = Date/Lot Traceability Code
S
2
S
2
S
2
S
2
67
Bump Side View
G
2
G
1
5
4
8
9
S
1
S
1
310
S
1
S
1
21
Backside View
8900E
xxx
Pin 1 Identifier
Ordering Information:
Si8900EDB-T2-E1 (Lead (Pb)-free)
G
2
S
2
G
1
S
1
N-Channel
4 kΩ
4 kΩ
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. The foot is defined as the top surface of the package.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Source1- Source2 Voltage
V
S1S2
20
V
Gate-Source Voltage
V
GS
± 12
Continuous Source1- Source2 Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
S1S2
75.4
A
T
A
= 85 °C
5.1 3.9
Pulsed Source1- Source2 Current
I
SM
50
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.8 1
W
T
A
= 85 °C
0.9 0.5
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
Package Reflow Conditions
c
IR/Convection 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
55 70
°C/W
Steady State 95 120
Maximum Junction-to-Foot
b
Steady State
R
thJF
12 15
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 71830
S-82119-Rev. G, 08-Sep-08
Vishay Siliconix
Si8900EDB
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
SS
= V
GS
, I
D
= 1.1 mA
0.45 1.0 V
Gate-Body Leakage
I
GSS
V
SS
= 0 V, V
GS
= ± 4.5 V
± 4 µA
V
SS
= 0 V, V
GS
= ± 12 V
± 10 mA
Zero Gate Voltage Drain Current
I
S1S2
V
SS
= 20 V, V
GS
= 0 V
1
µA
V
SS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
5
On-State Drain Current
a
I
S(on)
V
SS
= 5 V, V
GS
= 4.5 V
5A
Source1- Source2 On State Resistance
a
R
S1S2(on)
V
GS
= 4.5 V, I
SS
= 1 A
0.020 0.024
Ω
V
GS
= 3.7 V, I
SS
= 1 A
0.022 0.026
V
GS
= 2.5 V, I
SS
= 1 A
0.026 0.034
V
GS
= 1.8 V, I
SS
= 1 A
0.032 0.040
Forward Transconductance
a
g
fs
V
SS
= 10 V, I
SS
= 1 A
31 S
Dynamic
b
Tur n - O n D e l ay Time
t
d(on)
V
SS
= 10 V, R
L
= 10 Ω
I
SS
≅ 1 A, V
GEN
= 4.5 V, R
g
= 6 Ω
35
µs
Rise Time
t
r
4.5 7
Turn-Off Delay Time
t
d(off)
55 85
Fall Time
t
f
15 25
Gate-Current vs. Gate-Source Voltage
0
4
8
12
16
20
0 3 6 9 12 15
V
GS
- Gate-to-Source Voltage (V)
- Gate Current (mA)I
GSS
I
GSS
at 25 °C (mA)
Gate Current vs. Gate-Source Voltage
0.01
100
10 000
0.1
1
10
1000
V
GS
- Gate-to-Source Voltage (V)
- Gate Current (I
GSS
µA)
0 369 15
T
J
= 25 °C
T
J
= 150 °C
12