P2B60HP2F

Power MOSFETs

600V, 2A, N-channel

Feature

・N-channel

・SMD

・High Voltage

・High Speed

・Low Capacitance

・High Avalanche Durability, High di/dt Durability

・Pb free terminal

・RoHS:Yes

OUTLINE

Package (House Name): FB

Package (JEDEC Code): TO-252AA

Equivalent circuit

Absolute Maximum Ratings (unless otherwise specified : Tc=25℃)

Item Symbol Conditions Ratings Unit

Storage temperature Tstg -55 to 150 ℃

Channel tempertature Tch 150 ℃

Drain-source voltage V 600 V

Gate-source voltage V ±30 V

Continuous drain current(DC) I 2 A

Continuous drain current(Peak) I Pulse width 10μs, duty=1/100 8 A

Continuous source current(DC) Is 2 A

Total power dissipation P 35 W

Repetitive avalanche current I Starting Tch=25℃ Tch≦150℃ 2 A

Single avalanche energy E Starting Tch=25℃ Tch≦150℃ 30 mJ

Repetitive avalanche energy E Starting Tch=25℃ Tch≦150℃ 3 mJ

Drain‐source diode di/dt

strength

di/dt Is=2A, Tc=25℃ 350 A/μs

※︓See the original Specifications

DSS

GSS

Shindengen Electric Manufacturing Co., Ltd. 1/7 P2B60HP2F_Rev.02(2021.06)

Electrical Characteristics (unless otherwise specified : Tc=25℃)

Item Symbol Conditions

Ratings

Unit

MIN TYP MAX

Drain-Source breakdown

voltage

V ID=1mA, VGS=0V 600 V

Zero gate voltage drain current I VDS=600V, VGS=0V 100 μA

Gate-source leakage current I VGS=±25V, VDS=0V ±10 μA

Forward transconductance g ID=1A, VDS=10V 1.2 2.5 S

Static drain-source on-state

resistance

R ID=1A, VGS=10V 3.4 4.2 Ω

Gate threshold voltage Vth ID=1mA, VDS=10V 2 3.25 4.5 V

Source-drain diode forward

voltage

V IS=1A, VGS=0V 1.5 V

Thermal resistance Rth(j-c) Junction to case 3.55 ℃/W

Total gate charge Qg VDD=400V, VGS=10V, ID=2A 6.8 nC

Input capacitance Ciss VDS=50V, VGS=0V, f=1MHz 240 pF

Reverce transfer capacitnce Crss VDS=50V, VGS=0V, f=1MHz 4 pF

Output capacitance Coss VDS=50V, VGS=0V, f=1MHz 29 pF

Turn-on delay time td(on)

ID=1A, RL=150Ω, VDD=150V, Rg=50Ω,

VGS(+)=10V, VGS(-)=0V

15 ns

Rise time tr

ID=1A, RL=150Ω, VDD=150V, Rg=50Ω,

VGS(+)=10V, VGS(-)=0V

24 ns

Turn-off delay time td(off)

ID=1A, RL=150Ω, VDD=150V, Rg=50Ω,

VGS(+)=10V, VGS(-)=0V

58 ns

Fall time tf

ID=1A, RL=150Ω, VDD=150V, Rg=50Ω,

VGS(+)=10V, VGS(-)=0V

22 ns

Diode reverse recovery time trr IF=2A, VGS=0V, -di/dt=100A/μs 52 ns

※︓See the original Specifications

(BR)DSS

DSS

GSS

DS(ON)

Shindengen Electric Manufacturing Co., Ltd. 2/7 P2B60HP2F_Rev.02(2021.06)