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Exhibit 1.01
Diodes Incorporated
Conflict Minerals Report
for the Year Ended December 31, 2020
I. INTRODUCTION
This Conflict Minerals Report (“CMR” or “Report”) for DIODES INCORPORATED (herein referred to
as “Diodes,” the “Company,” “we,” “us,” or “our”) is presented to comply with Rule 13p-1 under the
Securities Exchange Act of 1934 (the “Rule”) for the reporting period from January 1 to December 31,
2020 (the “2020 reporting period”). The Rule was adopted by the Securities and Exchange
Commission (“SEC”) to implement reporting and disclosure requirements related to Conflict Minerals
as directed by the Dodd-Frank Wall Street Reform and Consumer Protection Act of 2010 (the “Dodd-
Frank Act”).
The Rule imposes certain reporting obligations on SEC registrants whose manufactured products
contain Conflict Minerals which are necessary to the functionality or production of their products.
These requirements apply to registrants whatever the geographic origin of the Conflict Minerals and
whether or not they fund armed conflict.
The Report covers activities of all of Diodes’ majority-owned subsidiaries and variable interest entities
that are subject to the Rule. The Rule imposes certain due diligence and reporting obligations on SEC
registrants whose manufactured products (including products contracted to be made for that
registrant) contain “conflict minerals” necessary to the functionality or production of those products.
Conflict Minerals are defined as columbite-tantalite, also known as coltan (the metal ore from which
tantalum is extracted), cassiterite (the metal ore from which tin is extracted), wolframite (the metal ore
from which tungsten is extracted), gold, or their derivatives (collectively referred to as “3TGs”); or any
other mineral or its derivatives as determined by the Secretary of State to be financing conflicts in the
Democratic Republic of the Congo (“DRC”) or adjoining countries.
This Report has been prepared by the management of Diodes.
Diodes is committed to the responsible sourcing of raw materials globally in support of human rights,
labor, health and safety, environment, and ethics (for more information, please see
https://www.diodes.com/sustainability. This commitment includes our efforts to responsibly address
Conflict Minerals in our products’ supply chain. This Report describes our efforts during the 2020
reporting period, which demonstrate further meaningful progress.
The net number of 3TG smelters identified in our supply chain during 2020 increased from 136 to 171
due to changes in our suppliers and their sub-tier suppliers, additional information provided by
suppliers, and changes in the status of smelters under the Conformant Smelters and Refiners
Program (“RMAP”).
This Report has not been audited because the circumstances that would require an audit under the
Rule are not present. The Report can be found on Diodes’ website at
https://www.diodes.com/about/company/sustainability/supply-chain.
Diodes is a leading global manufacturer and supplier of high-quality application specific standard
products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. Diodes
serves the consumer electronics, computing, communications, industrial, and automotive markets.
Our products include diodes, rectifiers, transistors, MOSFETs, GPP bridges, GPP Rectifiers,
protection devices, function-specific arrays, single gate logic, amplifiers and comparators, Hall-effect
and temperature sensors, power management devices, including LED drivers, AC-DC converters and
controllers, DC-DC switching and linear voltage regulators, and voltage references along with special
function devices, such as USB power switches, load switches, voltage supervisors, and motor
controllers. Diodes also has timing, connectivity, switching, and signal integrity solutions for high-
speed signals.
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Diodes’ corporate headquarters and Americas’ sales offices are located in Plano, Texas, and Milpitas,
California. Design, marketing, and engineering centers are located in Plano; Milpitas; Taipei, Taoyuan
City, Zhubei City, Taiwan; Shanghai, Yangzhou, China; Oldham, England; and Neuhaus, Germany.
Diodes’ wafer fabrication facilities are located in Oldham, Greenock, UK; Shanghai, Wuxi, China; and
Keelung, Hsinchu, Taiwan. Diodes has assembly and test facilities located in Shanghai, Jinan,
Chengdu, and Wuxi, China; Neuhaus, Germany; and Jhongli and Keelung, Taiwan. Additional
engineering, sales, warehouse, and logistics offices are located in Taipei; Hong Kong; Oldham;
Shanghai, Shenzhen, Wuhan, and Yangzhou, China; Seongnam-si, South Korea; and Munich,
Frankfurt, Germany; with support offices throughout the world.
The company’s manufacturing facilities have achieved certification in the internationally recognized
standards of ISO9001:2015, IATF16949:2016, and ISO14001:2015. Diodes is also C-TPAT certified.
We believe these Quality Awards reflect the superior quality-control techniques established at Diodes
and further enhance our credibility as a vendor-of-choice to OEMs increasingly concerned with quality
and consistency.
Our product focus is on high-growth end-user equipment markets such as satellite TV set-top boxes,
portable DVD players, datacom devices, ADSL modems, power supplies, medical devices (non-life
support devices/systems), PCs and notebooks, flat panel displays, digital cameras, mobile handsets,
AC-to-DC and DC-to-DC conversion, Wireless 802.11 LAN access points, brushless DC motor fans,
serial connectivity, and automotive applications.
Our product line includes over 25,000 products, and we shipped approximately 43 billion units in
2020.
We manufacture “in-house” and contract with third parties to manufacture our products, which we
refer to collectively in this CMR as “products.” A review of the bills of materials used in our products
showed that the 3TGs are necessary for the functionality of our products.
Not all of our products contain all of these metals, but most of our products contain at least one of
them, and are thus within the scope of the Rule. On the basis of our “reasonable country of origin
inquiry” required by the Rule and described in Section II of this Report, some of the 3TGs contained in
our products have originated in the DRC or an adjoining country (each a “Covered Country” for
purposes of the Rule). For that reason, we are submitting this CMR, which describes the conflict
minerals due diligence we have performed pursuant to the Rule, as an exhibit to our Form SD.
This CMR, which includes sections titled Reasonable Country of Origin Inquiry (“RCOI”), Due
Diligence Design and Performance, Smelter Information, Improvements from 2019 Conflict Minerals
Report, and Future Measures, is designed to meet the reporting requirements of the Rule. It is
publicly available on our website.
II. REASONABLE COUNTRY OF ORIGIN INQUIRY (RCOI)
Our RCOI corresponds to the first and second steps of the five-step OECD Guidance, as that
Guidance (including its Supplements) applies to each of the 3TGs and to Diodes as a “downstream
company.” The OECD Guidance provides a framework for detailed due diligence to support
responsible global supply-chain management of minerals, including the 3TGs.
Diodes is a direct and contract manufacturer with an extensive supply chain comprised of several
layers of suppliers positioned between ourselves and 3TG smelters/refiners and mines. Our contracts
require our suppliers to identify each and every substance including, but not limited to, 3TGs
contained in the materials/products supplied to us. We refer collectively in this CMR to our
manufacturing partners and their respective contracted suppliers as “in-scope suppliers.” Due to our
extended supply chain, we rely on our in-scope suppliers to provide us with information concerning
the sources and chains of custody of 3TGs necessary to the functionality or production of our
products. Because of our operation size, the complexity of our products, and the depth, breadth, and
constant evolution of our supply chain, it is difficult to identify actors upstream from our direct
suppliers. We provide details on our supply chain due diligence process in Section III.