1. Product profile
1.1 General description
High-speed switching diode, encapsulated in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
1.3 Applications
n High-speed switching
n General-purpose switching
1.4 Quick reference data
[1] When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100 Ω; measured at I
R
= 1 mA.
2. Pinning information
MMBD4148
High-speed switching diode
Rev. 01 — 4 June 2009 Product data sheet
n High switching speed: t
rr
≤ 4ns n Low capacitance
n Low leakage current n Reverse voltage: V
R
≤ 75 V
n Repetitive peak reverse voltage:
V
RRM
≤ 75 V
n Small SMD plastic package
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
R
reverse voltage - - 75 V
I
R
reverse current V
R
= 75 V - - 0.5 µA
t
rr
reverse recovery time
[1]
--4ns
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 anode
2 not connected
3 cathode
12
3
006aaa764
3
12
MMBD4148 © Nexperia B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 4 June 2009 2 of 10
Nexperia
MMBD4148
High-speed switching diode
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] T
j
=25°C prior to surge.
Table 3. Ordering information
Type number Package
Name Description Version
MMBD4148 - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
MMBD4148 A6*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
-75V
V
R
reverse voltage - 75 V
I
F
forward current
[1]
- 215 mA
I
FRM
repetitive peak forward
current
t
p
≤ 0.5 µs;
δ≤0.25
- 500 mA
I
FSM
non-repetitive peak forward
current
square wave
[2]
t
p
=1µs-4A
t
p
=1ms - 1 A
t
p
= 1 s - 0.5 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 250 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C