RD3G03BAT
Pch -40V -35A Power MOSFET
Datasheet
llOutline
V
DSS
-40V
R
DS(on)
(Max.)
19.1mΩ
DPAK
I
D
±35A
TO-252
P
D
56W
llInner circuit
llFeatures
1) Low on - resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free plating ; RoHS compliant
llPackaging specifications
Type
Packing
Embossed
Tape
Reel size (mm) 330
llApplication
Tape width (mm) 16
Switching
Quantity (pcs) 2500
Taping code TL1
Marking
RD3G03BAT
llAbsolute maximum ratings (T
a
= 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage
V
DSS
-40 V
Continuous drain current
I
D
*1
±35 A
Pulsed drain current
I
DP
*2
±70 A
Gate - Source voltage
V
GSS
±20 V
Avalanche current, single pulse
I
AS
*3
-35 A
Avalanche energy, single pulse
E
AS
*3
40 mJ
Power dissipation
P
D
*1
56 W
Junction temperature
T
j
150 ℃
Operating junction and storage temperature range
T
stg
-55 to +150 ℃
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© 2020 ROHM Co., Ltd. All rights reserved.
1/11
20201028 - Rev.002
RD3G03BAT
Datasheet
llThermal resistance
Parameter Symbol
Values
Unit
Min. Typ. Max.
Thermal resistance, junction - case
R
thJC
*1
- - 2.22 ℃/W
llElectrical characteristics (T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
-40 - - V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
I
D
= -1mA
- -22 - mV/℃
ΔT
j
referenced to 25℃
Zero gate voltage
drain current
I
DSS
V
DS
= -40V, V
GS
= 0V
- - -1 μA
Gate - Source leakage current
I
GSS
V
GS
= ±20V, V
DS
= 0V
- - ±100 nA
Gate threshold voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -1mA
-1.0 - -2.5 V
Gate threshold voltage
temperature coefficient
ΔV
GS(th)
I
D
= -1mA
- 3.7 - mV/℃
ΔT
j
referenced to 25℃
Static drain - source
on - state resistance
R
DS(on)
*4
V
GS
= -10V, I
D
= -35A
- 15.0 19.1
mΩ
V
GS
= -4.5V, I
D
= -17.5A
- 18.5 24.0
Gate resistance
R
G
f = 1MHz, open drain - 12 - Ω
Forward Transfer
Admittance
|Y
fs
|
*4
V
DS
= -5V, I
D
= -17.5A
12 - - S
*1 T
c
=25℃, Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 0.05mH, V
DD
= -20V, R
G
= 25Ω, Starting T
j
= 25℃ Fig.3-1,3-2
*4 Pulsed
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© 2020 ROHM Co., Ltd. All rights reserved.
2/11
20201028 - Rev.002