Electrostatic Discharge Protection Devices (ESD) Low Capacitance
Revision May 18, 2018 1 / 6
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
ESD05V88D-LC
UN SemiconductorCo., Ltd. www.unsemi.com.tw
SOD-882 / DFN-1006
The ESD05V88D-LC is ultra low capacitance TVS arrays
designed to protect high speed data interfaces. This series has
been specifically designed to protect sensitive components
which are connected to high-speed data and transmission lines
from over-voltage caused by ESD (electrostatic discharge),
CDE (Cable Discharge Events), and EFT (electrical fast
transients).
u Protects one data or I/O line
u Low capacitance
u Low clamping voltage
u IEC 61000-4-2, level 4
u IEC 61000-4-2 ( ESD ), > ±20KV ( air ),
> ±11KV ( contact )
u Cellular Handsets & Accessories
u Digital Visual Interface (DVI)
u RF Circuits
u Display Port
u USB Ports
u MDDI Ports
u PCI Express
u Case Material: "Green" molding compound UL
flammability classification 94V-0 (No Br.Sb, Cl)
u Terminals: Lead Free Plating (Matte Tin Finish)
u Component in accordance to RoHs 2002/95/E
Symbol Parameter Value Units
P
PP
Peak Pulse Power (tp=8/20μs waveform) 60 W
I
PP
Peak Pulse Current (tp=8/20μs waveform) 2.5 A
T
J
Operating Junction Temperature Range -55 to +125 ºC
T
STG
Storage Temperature Range -55 to +150 ºC
T
L
Soldering Temperature, t max = 10s 260 ºC
Air Discharge
>±20
IEC61000-4-2 (ESD)
Contact Discharge
>±11
KV
Mechanical Characteristics
D
escription
Feature
Functional Diagram
Applications
Mechanical Data
1
2
Electrostatic Discharge Protection Devices (ESD) Low Capacitance
Revision May 18, 2018 2 / 6
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
ESD05V88D-LC
UN SemiconductorCo., Ltd. www.unsemi.com.tw
Parameter Symbol
Conditions Min Typ Max Unit
Reverse standoff voltage V
RWM
--- --- 5.0 V
Breakdown voltage V
BR
I
T
= 1 mA 6.0 --- --- V
Reverse leakage current I
RM
V
DRM
= 5V --- --- 1 μA
Clamping Voltage V
C
I
PP
= 1A, tp = 8/20μs --- --- 12 V
Clamping Voltage V
C
I
PP
= 2.5A, tp = 8/20μs --- --- 25 V
Junction capacitance C
J
V
R
= 0V, f = 1MHz, Between I/O pins --- 0.3
0.5
pF
Fig1. 8/20 us Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2)
Fig3. Power Dissipation Versus Pulse Time Fig4. Peak Pulse Power Versus TJ
Characteristic Curves
Electrical Characteristics
(
T
J
=
25
ºC
unless otherwise
noticed
)
0 5 10 15 20 25
30
120
t
r
100
80
60
40
20
0
Peak Value I
PP
t
d
=t I
PP
/2
TEST
WAVEFORM
PARAMETERS
t
r
=8μs
t
d
=20μs
t
-
Time
(
μ
s
)
I
PP
-
Peak Pulse Current
-
% of I
PP
60ns
10%
Percent of Peak Pulse Current %
30ns
tr = 0.7~1ns
Time (ns)
90%
100%