SBR is the registered trademark of Diodes Incorporated.
SBR05M100BLP
Document number: DS31109 Rev. 9 - 2
1 of 5
www.diodes.com
March 2016
© Diodes Incorporated
SBR05M100BLP
0.5A SBR BRIDGE
SUPER BARRIER RECTIFIER
Product Summary
I
O
(A)
V
F MAX
(V)
I
R MAX
(µA)
0.5
0.73
25
Description and Applications
The SBR05M100BLP has four diodes in full bridge configuration
packaged in the low profile DFN package. Offering low forward
voltage drop and excellent high temperature stability, this device is
ideal for use as Bridge Diodes where small footprint and low profile is
desired.
Features
Low Forward Voltage Drop (V
F
) and Low Reverse Leakage (I
R
)
Excellent High Temperature Stability
Patented Super Barrier Rectifier SBR
®
Technology
Low Profile Package with Excellent Thermal Dissipation
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN3030-4
Case Material: Molded Plastic “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu Over Copper Lead Frame, Solderable
per MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.02 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
SBR05M100BLP-7
U-DFN3030-4
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
Code
C
D
E
F
G
H
I
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Pin Configuration
**Do Not Connect the DNC Pad**
2
1
3
4
DA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
e4
DFN3030-4
N/C
U-DFN3030-4
DNC
SBR is the registered trademark of Diodes Incorporated.
SBR05M100BLP
Document number: DS31109 Rev. 9 - 2
2 of 5
www.diodes.com
March 2016
© Diodes Incorporated
SBR05M100BLP
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
RM
100
V
RMS Reverse Voltage
V
R(RMS)
70
V
Average Rectified Output Current
I
O
500
mA
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load (Per Diode)
I
FSM
8
A
Thermal Characteristics
Characteristic
Symbol
Typ
Max
Unit
Power Dissipation (Note 5)
P
D
-
0.56
W
Thermal Resistance Junction to Ambient Air (Note 5)
R
JA
-
222
°C/W
Thermal Resistance Junction to Ambient Air (Note 6)
R
JA
-
149
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage
V
(BR)R
100
-
-
V
I
R
= 250A
Forward Voltage (Per Diode)
V
F
-
0.54
0.67
0.56
0.60
0.73
0.63
V
I
F
= 0.25A, T
J
= +25ºC
I
F
= 0.5A, T
J
= +25ºC
I
F
= 0.5A, T
J
= +125ºC
Reverse Current (Note 7) (Per Diode)
I
R
-
0.3
32
25
250
µA
V
R
= 100V, T
J
= +25ºC
V
R
= 100V, T
J
= +125ºC
Notes: 5. FR-4 PCB, 2 oz. copper, minimum recommended pad layout per http://www.diodes.com/package-outlines.html.
6. Polymide PCB, 2 oz. copper; minimum recommended pad layout per http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heating effect.
0
100
200
300
400
500
600
700
800
900
Fig. 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
0.01
0.1
1
10
100
1,000
-
I
,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(
m
A
)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 0.5 1 1.5
I , AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
F(AV)
P , POWER DISSIPATION (W)
D