Product Selector Guide
Qspeed
™
Diodes
Merged PIN-Schottky
Technology
Innovation in power conversion
600 V H-Series
Product
V
RRM
MAX
I
F(AVG)
T
J
=150 °C
V
F
T
J
=25 °C
V
F
T
J
=150 °C
I
FSM
8.3 mS
Q
RR
T
J
=25 °C
Q
RR
T
J
=125 °C
Package
(Isolated)
QH03TZ600 600 V 3 A 2.50 V 2.10 V 30 A 5.9 nC 14.9 nC TO-220AC
QH03BZ600 600 V 3 A 2.50 V 2.10 V 30 A 5.9 nC 14.9 nC TO-263AB
QH05TZ600 600 V 5 A 2.55 V 2.15 V 50 A 7.1 nC 19.4 nC TO-220AC
QH05BZ600 600 V 5 A 2.55 V 2.15 V 50 A 7.1 nC 19.4 nC TO-263AB
QH08TZ600 600 V 8 A 2.56 V 2.20 V 80 A 8.8 nC 26 nC TO-220AC
QH08BZ600 600 V 8 A 2.56 V 2.20 V 80 A 8.8 nC 26 nC TO-263AB
QH12TZ600 600 V 12 A 2.63 V 2.30 V 80 A 9.8 nC 30.5 nC TO-220AC
QH12BZ600 600 V 12 A 2.63 V 2.30 V 80 A 9.8 nC 30.5 nC TO-263AB
600 V Lowest Switching Losses
Qspeed SiC replacement diodes (H-Series) have the same high-switching performance as expensive SiC
diodes at >80 kHz using lower cost silicon technology. In addition, all H-Series diodes come in internally
isolated packages which simplies mounting.
*For TO-263AB, use TO-220AC recommendations above.
Diode recovery causes
loss in the MOSFET
H-Series essentially
eliminates that loss