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�� 2020 fast SiC Semiconductor Inc.
Rev. Tentative – Oct. 2020
Product Datasheet
FC06008
Silicon Carbide Merged PN-Schottky Diode
650V, 8A SiC MPS High Speed Rectifier – Cheetah Series
Product Datasheet
• Higher System Efficiency
• Increase Parallel Device Convenience
• Enable High Temperature Application
• Allow High Frequency Operation
• Realize Compact and Lightweight Systems
• High Reliability
Parameter
Symbol
Value
Unit
DC Blocking Voltage
V
R
6
50
V
Nominal Forward Current
I
F, N O M
8
A
Continuous
Forward Current
I
F, max (cont.)
14
Power Dissipation
P
tot
48.3
W
I
2
t Value
∫i
2
dt
5.1
A
2
s
Total Capacitive Charge
Q
C
10
nC
Capacitance Stored Energy
E
C
1.6
μ
J
Junction & Storage Temperature
T
j
, T
stg
-
55 to 175
°
C
• Switching Mode Power Supply
• Power Factor Correction
• Portable Adaptor
• Renewable Energy
Part Number Package Marking
FC06008A TO-252-2L FC06008
FC06008B PQFN 5 x 6 FC06008
-- -- --
Features
Product Information:
Key Performance Parameters
Potential ApplicationsBenefits
• Low Forward Voltage (V
F
)
• Low Profile & Low Parasitic Inductance Packaging
• Zero Reverse Recovery
• Ultra-Low Switching Loss
• Optimized for High Speed Applications
• Compact MSL-1 SMT Package
• RoHS Compliant and Halogen Free
For further information about comparable products, please contact (www.fastsic.com).
Terminal
Packaging Type
TO-252-2L PQFN 5x6
Anode 2 1, 2, 3
Cathode 1, Tab 5, 6, 7, 8
N.C. -- 4
Cathode
Anode
PQFN 5 x 6
1
2
3
4
8
7
6
5
TO-252-2L
1
2
COMPLIANT
Tab
www.fastsic.com
© 2020 fast SiC Semiconductor Inc.
Rev. Tentative – Oct. 2020
Product Datasheet
Product Datasheet
FC06008
Parameter
Symbol
Min. Typ.
Max.
Unit
Test Conditions
DC Characteristics
DC Blocking Voltage
V
DC
650 -- --
V
T
j
=25°C
Forward Voltage
V
F
--
1.50
1.90
I
F
=8A, T
j
=25°C
I
F
=8A, T
j
=175°C
Reverse Current
I
R
--
10
50
μ
A
V
R
=650V, T
j
=25°C
V
R
=650V, T
j
=175°C
AC Characteristics
Total Capacitive Charge
Q
C
-- 10 --
nC
V
R
=400V, T
j
=25°C
Total Capacitance
C
j
--
140
19
18
--
pF
V
R
=1V, f=1MHz, T
j
=25°C
V
R
=300V, f=1MHz, T
j
=25°C
V
R
=600V, f=1MHz, T
j
=25°C
Capacitance Stored Energy
E
C
-- 1.6 --
μ
J
V
R
=400V, T
j
=25°C
Electrical Characteristics:
Maximum Ratings:
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Continuous
Forward Current
I
F
-- --
8.0
11.5
14.0
A
T
c
≤100°C, Duty=100%
T
c
≤75°C, Duty=100%
T
c
≤25°C, Duty=100%
Non
-Repetitive Forward Surge
Current, Sinusoidal Halfwave
I
F, S M
-- -- 65
T
c
=25°C, t
p
=1ms
Non
-Repetitive Peak Forward
Surge Current
I
F, m a x
-- -- 283
T
c
=25°C, t
p
=10μs
I
2
t Value
∫i
2
dt -- -- 5.1
A
2
s
T
c
=25°C, t
p
=10ms
Repetitive Peak Reverse Voltage
V
RRM
-- -- 650
V
T
c
=25°C
Power Dissipation
P
tot
-- -- 48.3
W
T
c
=25°C
Junction Temperature
T
j
-55 -- 175
°
C
--
Storage Temperature
T
stg
-55 -- 175
Soldering Temperature
T
L
-- -- 260
Parameter Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Thermal Impedance, junction
–
case
R
th-jc
-- 3.1
K/W
--
Thermal Impedance, junction
–
ambient
R
th-ja
--
Device on PCB, with 6 cm² of
cooling area
Thermal Characteristics: