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Description
The AR8001S2 is a low capacitance TVS diode, utilizing
leading monolithic silicon technology to provide fast re-
sponse time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive
high-speed data lines. The AR8001S2 has very low ca-
pacitance with a typical value 0.75pF, and complies with
the IEC 61000-4-2 (ESD) with ±30kV air and ±30kV con-
tact discharge. It is assembled into a 3-pin lead-free SOT-
23 package. The combination of small size, low capaci-
tance and high level of ESD protection makes it an ideal
transient protection for high-speed data, signal, communi-
cation equipment, and VCC bus.
Features
• Very low capacitance: 0.75pF typical
• Ultra low leakage: nA level
• Operating voltage: 80V
• Low clamping voltage
• JEDEC SOT-23 package
• Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-5 (Lightning) 12A (8/20μs)
• RoHS Compliant
AR8001S2
1-Line Low Capacitance TVS
Part Number Packaging Reel Size
AR8001S2 3000/Tape & Reel 7 inch
80 = Device Marking Code
Pin and Circuit Schematic
Dimensions and Pin Configuration
Mechanical Characteristics
• Package: SOT-23
• Lead Finish: Matte Tin
• Case Material: “Green” Molding Compound.
• Moisture Sensitivity: Level 3 per J-STD-020
• Terminal Connections: See Diagram Below
• Marking Information: See Below
Applications
• Cellular Handsets and Accessories
• Notebooks and Handhelds
• Portable Instrumentation
• Set Top Box
• Industrial Controls
• Server and Desktop PC
• High-Speed data line
• LAN/WAN equipment
Marking Information
Ordering Information
Revision 12/2017 2 of 5 www.appliedpowermicro.com
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter Symbol Value Unit
Peak Pulse Power (8/20µs) Ppk 240 W
Peak Pulse Current (8/20µs) IPP 12 A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±30
±30
kV
Operating Temperature Range TJ −55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Parameter Symbol Min Typ Max Unit Test Condition
Reverse Working Voltage VRWM 80 V
Breakdown Voltage VBR 100 V IT = 1mA
Reverse Leakage Current I
R
0.1 µA VRWM = 80V
Clamping Voltage VC 3 V IPP = 1A (8 x 20µs pulse)
Clamping Voltage VC 20 V IPP = 12A (8 x 20µs pulse)
Junction Capacitance CJ 1.5 pF VR = 0V, f = 1MHz,
AR8001S2