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Description
The AR1255P4 is a low capacitance TVS array, utilizing
leading monolithic silicon technology to provide fast re-
sponse time and low ESD clamping voltage, making this
device an ideal solution for protecting voltage sensitive
high-speed data lines. The AR1255P4 complies with the
IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV
contact discharge. It is assembled into a 6-pin DFN2018-
6 lead-free package. . Each device will protect up to four
high-speed lines. The combination of small size, low ca-
pacitance, and high surge capability makes them ideal for
use in applications such as USB ports.
Features
Low capacitance: 0.35pF typical (I/O to GND)
Very high peak pulse power at Vbus (2500W)
Up to 3 data lines and one power line protects
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV (Vbus) / 16kV (data lines)
Contact discharge: ±30kV (Vbus) / 10kV (data lines)
– IEC61000-4-4 (Lightning) 100A (Vbus, 8/20µs) /
4A (data lines, 8/20µs)
RoHS Compliant
Dimensions and Pin Configuration
AR1255P4
Low Capacitance TVS Diode Array
Part Number Packaging Reel Size
AR1255P4 3000/Tape & Reel 7 inch
1255P = Device Marking Code
YYWW = Date Code
Dot denotes Pin1
Circuit Diagram
Mechanical Characteristics
Package: DFN2018-6
Case Material: “Green” Molding Compound
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram Below
Marking Information: See Below
Applications
USB 2.0
USB OTG
µUSB
Marking Information
Ordering Information
1255P
YYWW
Pin Schematic
2 3 4
5, 6,
12V
1
Tabs
4V
Vbus
D+
D-
ID
GND
GND
GND
GND
Revision 12/2017 2 of 5 www.appliedpowermicro.com
Absolute Maximum Ratings (T
A
=25°C unless otherwise specified)
Electrical Characteristics (T
A
=25°C unless otherwise specified)
Parameter Symbol Value Unit
DP, DM, USB ID (Pins 2, 3, 4)
Peak Pulse Power (8/20µs) Ppk 60 W
Peak Pulse Current (8/20µs) IPP 4 A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±16
±10
kV
Operating Temperature Range TJ −55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Vbus (Pin 1)
Peak Pulse Power (8/20µs) Ppk 2500 W
Peak Pulse Current (8/20µs) IPP 100 A
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±30
±30
kV
Operating Temperature Range TJ −55 to +125 °C
Storage Temperature Range Tstg −55 to +150 °C
Parameter Symbol Min Typ Max Unit Test Condition
DP, DM, USB ID (Pins 2, 3, 4)
Reverse Working Voltage VRWM 4 V Any I/O to ground
Breakdown Voltage VBR 4.5 V IT = 1mA, any I/O to ground
Reverse Leakage Current I
R
0.1 µA VRWM = 4V, any I/O to ground
Clamping Voltage VC 10.5 V
IPP = 1A (8 x 20µs pulse), any I/O
pin to ground
Clamping Voltage VC 15.0 V
IPP = 4A (8 x 20µs pulse), any I/O
pin to ground
Junction Capacitance CJ 0.35 0.5 pF
VR = 0V, f = 1MHz, any I/O pin to
ground
AR1255P4
Note: I/O Pins are 2, 3, 4