November 9,2020 PCDP20120G1-REV.00 Page 1
Silicon Carbide Schottky Barrier Diode
TO-220AC
Features
Temperature Independent Switching Behavior
High Surge Current Capability
Positive Temperature Coefficient on V
F
Low Conduction Loss
Zero Reverse Recovery
High junction temperature 175
o
C
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: TO-220AC molded plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.067 ounces, 1.89 grams
Application
• PFC, UPS, PV Inverter, EV Charging Station, Welder
Maximum Ratings and Thermal Characteristics (T
C
= 25
o
C unless otherwise specified)
PARAMETER SYMBOL LIMIT UNITS
Repetitive Peak Reverse Voltage V
RRM
1200 V
DC Blocking Voltage V
DC
1200 V
Continuous Forward Current T
C
= 150
o
C I
F
20 A
Repetitive Peak Surge Current
Half Sine Wave, D=0.1
T
C
= 25
o
C , t
p
=10ms
T
C
=125
o
C , t
p
=10ms
I
FRM
76
56
A
Peak Forward Surge Current
Half Sine Wave
T
C
= 25
o
C , t
p
=10ms
T
C
=125
o
C , t
p
=10ms
I
FSM
152
128
A
Peak Forward Surge Current
t
p
=10us, Pulse
960 A
Maximum Power Dissipation P
total
267.9 W
Operating Junction Temperature Range T
J
-55~175
o
C
Storage Temperature Range T
STG
-55~175
o
C
V
RRM
V
F(Typ.)
I
F
Q
C
1200 V 20 A
1.5 V 87 nC
November 9,2020 PCDP20120G1-REV.00 Page 2
Electrical Characteristics (T
C
= 25
o
C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Forward Voltage Drop V
F
I
F
= 20 A, T
J
= 25
o
C -
1.5 1.7
V
I
F
= 20 A, T
J
= 175
o
C - 2.0
-
Reverse Leakage Current I
R
V
R
= 1200 V, T
J
= 25
o
C
- 15 180 μA
V
R
= 1200 V, T
J
= 175
o
C
- 0.07 - mA
Total Capacitive Charge Q
C
I
F
= 20 A, V
R
= 800V
- 87 - nC
Total Capacitance C
V
R
= 1V, f = 1MHz - 1040 - pF
V
R
= 400V, f = 1MHz - 77 - pF
V
R
= 800V, f = 1MHz - 57 - pF
Capacitance Stored Energy E
C
V
R
= 800V - 25.8 - μJ
Thermal Resistance R
θJC
- 0.56 -
o
C/W