November 9,2020 PCDP08120G1-REV.00 Page 1
Silicon Carbide Schottky Barrier Diode
TO-220AC
Features
Temperature Independent Switching Behavior
High Surge Current Capability
Positive Temperature Coefficient on V
F
Low Conduction Loss
Zero Reverse Recovery
High junction temperature 175
o
C
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: TO-220AC molded plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.067 ounces, 1.89 grams
Application
• PFC, UPS, PV Inverter, EV Charging Station, Welder
Maximum Ratings and Thermal Characteristics (T
C
= 25
o
C unless otherwise specified)
PARAMETER SYMBOL LIMIT UNITS
Repetitive Peak Reverse Voltage V
RRM
1200 V
DC Blocking Voltage V
DC
1200 V
Continuous Forward Current T
C
= 155
o
C I
F
8 A
Repetitive Peak Surge Current
Half Sine Wave, D=0.1
T
C
= 25
o
C , t
p
=10ms
T
C
=125
o
C , t
p
=10ms
I
FRM
44
40
A
Peak Forward Surge Current
Half Sine Wave
T
C
= 25
o
C , t
p
=10ms
T
C
=125
o
C , t
p
=10ms
I
FSM
64
52
A
Peak Forward Surge Current
t
p
=10us, Pulse
560 A
Maximum Power Dissipation P
total
135.1 W
Operating Junction Temperature Range T
J
-55~175
o
C
Storage Temperature Range T
STG
-55~175
o
C
V
RRM
V
F(Typ.)
I
F
Q
C
1200 V 8 A
1.5 V 32 nC
November 9,2020 PCDP08120G1-REV.00 Page 2
Electrical Characteristics (T
C
= 25
o
C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Forward Voltage Drop V
F
I
F
= 8 A, T
J
= 25
o
C -
1.5 1.7
V
I
F
= 8 A, T
J
= 175
o
C - 2.0
-
Reverse Leakage Current I
R
V
R
= 1200 V, T
J
= 25
o
C
- 5 60 μA
V
R
= 1200 V, T
J
= 175
o
C
- 0.05 - mA
Total Capacitive Charge Q
C
I
F
= 8 A, V
R
= 800V
- 32 - nC
Total Capacitance C
V
R
= 1V, f = 1MHz - 418 - pF
V
R
= 400V, f = 1MHz - 27 - pF
V
R
= 800V, f = 1MHz - 20 - pF
Capacitance Stored Energy E
C
V
R
= 800V - 9.1 - μJ
Thermal Resistance R
θJC
- 1.11 -
o
C/W