SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
DN:T205190
http://www.microdiode.com Rev:2020A0 Page :1
DSR0.5A THRU DSR0.5M
Features
Low profile space
Ideal for automated placement
Glass passivated chip junctions
Low forward voltage dropLow leakage current
High forward surge capability
High temperature soldering：
260℃/10 seconds at terminals Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Reverse Voltage - 50 to 1000 Volts Forward Current - 0.5 Ampere
Mechanical Data
Case: JEDEC 6OD-123FL molded plastic body
Terminals: Solderable per MIL-STD-750,Method 2026
Polarity: Polarity symbol marking on body
Mounting Position: Any
Weight
: 0.007 ounce, 0.02 grams
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum Ratings And Electrical Characteristics
Parameter
SYMBOL S
DSR0.5A
UNITS
Marking Code
MDD
S05A
MDD MDD MDD MDD
Maximum repetitive peak reverse voltage
V
RRM
50 100
200 400 600 800 1000
V
Maximum RMS voltage
V
RMS
35 70 105
280 420 560
700
V
Maximum DC blocking voltage
V
DC
50 100
200 400 600 800 1000
V
Maximum average forward rectified current at
TL(see fig.1)
I
(AV)
0.5
A
Peak forward surge current 8.3ms single half
sine-wave
superimposed onrated load (JEDEC Metho d)
I
FSM
15.0
A
Maximum instantaneous forward voltage at 0.5A
V
F
1.1
V
Maximum DC reverse current TA=25
℃
at rated DCblocking voltage TA=125
℃
I
R
5
50.0
μA
Typical junc tion capacitan ce (NOTE 1)
C
J
4
pF
Operating junctio n temperature range
T
J
-50to+150
℃
Storage temperature range
T
STG
-55to+150
℃
Dimensions in inches and (millimeters)
SOD-123FL
0.154(3.90)
0.141(3.60)
0.035(0.90)
0.028(0.70)
0.008(0.20)
0.005(0.12)
0.043(1.10)
0.035(0.90)
0.114(2.90)
0.102(2.60)
0.031 (0.08)
0.043 (1.10)
0.075(1.90)
0.067(1.70)
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
S05A
DSR0.5B
S05B
DSR0.5D
S05D
DSR0.5G
S05G
DSR0.5J
S05G
DSR0.5K
S05K
DSR0.5M
S05M
S05B
S05D
S05K
S05M
MDDMDD
S05GS05G
