©2020 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA
®
Diodes)
Revision: 08/05/20
General Purpose Surge Protection - SP1250
Description
Applications
The SP1250 unidirectional TVS is fabricated in a proprietary
silicon avalanche technology. These diodes provide a high
ESD (electrostatic discharge) protection level for electronic
equipment. The SP1250 TVS can safely absorb repetitive
ESD strikes of ±30 kV (contact and air discharge as defined
in IEC 61000-4-2) without any performance degradation.
Additionally, each TVS can safely dissipate a 50A 8/20μs
surge event as defined in IEC 61000-4-5 2
nd
edition.
Features
• ESD, IEC 61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 40A
(5/50ns)
• Lightning, 50A (8/20μs as
defined in IEC 61000-4-5
2
nd
edition)
• Low leakage current of
0.02μA (TYP) at 5V
• Halogen free, lead free
and RoHS compliant
• Moisture Sensitivity Level
(MSL -1)
• AEC-Q101 Qualified
• VBUS Protection
• Portable Battery
• Switches / Buttons
• Test Equipment /
Instrumentation
• Medical Equipment
• Notebooks / Desktops /
Servers
• Computer Peripherals
• Point-of-Sale Terminals
Pinout
Functional Block Diagram
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
RoHS
Pb
GREEN
12
SP1250 50A Discrete Unidirectional TVS Diode
SOD882
1
2
Note: This package image is for example and reference only. for detail package drawing,
please refer to the package section in this datasheet.
©2020 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA
®
Diodes)
Revision: 08/05/20
General Purpose Surge Protection - SP1250
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
Peak Current (t
p
=8/20μs) 50 A
T
OP
Operating Temperature -40 to 125 °C
T
STOR
Storage Temperature -55 to 150 °C
Electrical Characteristics (T
OP
=25ºC)
Note:
1. Parameter is guaranteed by design and/or component characterization.
2.Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
=1μA 5 V
Breakdown Voltage V
BR
I
R
=1mA 5.1 5.5 V
Reverse Leakage Current I
LEAK
V
R
=5V 0.02 0.1 μA
Clamp Voltage
1
V
C
I
PP
=50A, t
p
=8/20μs 8.7 10 V
Dynamic Resistance
2
R
DYN
TLP, t
P
=100ns 0.05 Ω
ESD Withstand Voltage
1
V
ESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance
1
C
IO-GND
Reverse Bias=0V, f=1MHz 120 pF
Capacitance vs. Reverse Bias Clamping voltage vs. I
PP
for 8/20μs waveshape
0.0
20.0
40.0
60.0
80.0
100.0
120.0
01234
5
Capacitance (pF)
Bias Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
15 20 25 30 35 40 45
50
Clamp Voltage (V
C
)
Peak Pulse Current
-
I
PP
(A)