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INN100W12—100V E-Mode GaN FET
Preliminary Datasheet 1.01
General Description
• Ultra High Switching Frequency
• Ultra Low R
DS
(on)
• Fast and Controllable Fall and Rise Time
• Zero Reverse Recovery Loss
Applications
• Synchronous Rectification
• Class D Audio
• Envelope Tracking Power Supplies
• High Frequency DC-DC Converter
Maximum Ratings
Symbol Parameter Max Unit
V
DS
Drain-to-Source Voltage (Continuous) 100 V
I
D
Continuous current 16 A
Pulsed (25˚C, T
Pulse
= 300 µs) 110 A
V
GS
Gate-to-Source Voltage 6 V
Gate-to-Source Voltage -4 V
T
J
Operating Temperatur6e -40 to 150 ˚C
T
STG
Storage Temperature -40 to 150 ˚C
Package: WLCSP 3X5
Size: 2.5mm X 1.5mm
Page 2
Jun, 2020
POWER THE FUTURE
www.innoscience.com.cn
INN100W12—100V E-Mode GaN FET
Preliminary Datasheet 1.01
Electrical Characteristics (T
J
=25°C unless otherwise stated)
Symbol Parameter Min Typ. Max Unit Test Condition
Static Parameters
BV
DSS
Drain-to-Source Voltage 100
V V
GS
= 0 V, I
D
= 200μA
I
DSS
Drain Source Leakage 20 120 µA V
GS
= 0 V, V
DS
= 80V
I
GSS
Gate-to-Source Forward Leakage 1 25 µA V
GS
= 5 V
Gate-to-Source Reverse Leakage 10 250 µA V
GS
= -4 V
V
GS(TH)
Gate Threshold Voltage
0.8
1.1
2.1
V
V
DS
= V
GS
, I
D
= 5mA
R
DS(on)
Drain-source on-state resistance 6
mΩ V
GS
= 5 V, I
D
= 16A
V
SD
Source-Drain Forward Voltage 1.45 V I
S
= 0.5A, V
GS
= 0 V
Dynamic Parameters
C
iss
Input Capacitance 660
pF
V
GS
= 0 V, V
DS
= 50V
C
oss
Output Capacitance 238 V
GS
= 0 V, V
DS
= 50V
C
rss
Reverse Transfer Capacitance 2.6 V
GS
= 0 V, V
DS
= 50V
C
oss(er)
Energy Related Coss 317 V
GS
= 0 V, V
DS
= 0 to 50V
C
oss(tr)
Time Related Coss 443 V
GS
= 0 V, V
DS
= 0 to 50V
R
G
Gate resistance Ω
Q
G
Total Gate Charge
5.2
nC
V
GS
= 5V,V
DS
= 50V,I
D
=16A
Q
GS
Gate to Source Charge
1.4
V
DS
= 50V,I
D
=16A
Q
GD
Gate to Drain Charge
0.6
V
DS
= 50V,I
D
=16A
Q
G(TH)
Gate Charge at Threshold
0.8
V
DS
= 50V,I
D
=16A
Q
OSS
Output Charge
22
V
DS
= 50V, V
GS
= 0V,
Thermal Parameters
SYMBOL
PARAMETER
TYP
UNIT
R
θJC
Thermal Resistance, Junction to Case
1.4
˚C/W
R
θJB
Thermal Resistance, Junction to Board
8.5
˚C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1)
64
˚C/W
Note 1: R
θJA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.