Page 1
July, 2020
POWER THE FUTURE
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INN100W08—100V E-Mode GaN FET
Datasheet 2.0
General Description
• Ultra High Switching Frequency
• Ultra Low R
DS
(on)
• Fast and Controllable Fall and Rise Time
• Zero Reverse Recovery Loss
• Protective Backside Coating
Applications
• High efficiency power conversion
• High density power conversion
• Motor Drive
• Industrial Automation
• DC-DC Converters
Maximum Ratings
Symbol
Parameter
Max
Unit
V
DS
Drain-to-Source Voltage (Continuous)
100
V
I
D
Continuous Current
4
A
Pulsed (25˚C, T
Pulse
= 100 µs)
50
A
V
GS
Gate-to-Source Voltage
6
V
Gate-to-Source Voltage
-4
V
T
J
Operating Temperature
-40 to 150
˚C
T
STG
Storage Temperature
-40 to 150
˚C
Package: WLCSP 2X3
Size: 1.508mm X 0.993mm
Page 2
July, 2020
POWER THE FUTURE
www.innoscience.com.cn
INN100W08—100V E-Mode GaN FET
Datasheet 2.0
Electrical Characteristics (T
J
=25°C unless otherwise stated)
Symbol
Parameter
Min
Typ.
Max
Unit
Test Condition
Static Parameters
BV
DSS
Drain-to-Source Voltage
100
V
V
GS
= 0 V, I
D
= 60 μA
I
DSS
Drain Source Leakage
10
40
µA
V
GS
= 0 V, V
DS
= 80 V
I
GSS
Gate-to-Source Forward Leakage
1
1000
µA
V
GS
= 5 V
Gate-to-Source Reverse Leakage
1
40
µA
V
GS
= -4 V
V
GS(TH)
Gate Threshold Voltage
0.8
1.3
2.4
V
V
DS
= V
GS
, I
D
= 0.9 mA
R
DS(on)
Drain-Source On Resistance
36
47
mΩ
V
GS
= 5 V, I
D
= 4 A
V
SD
Source-Drain Forward Voltage
1.9
V
I
S
= 0.4 A, V
GS
= 0 V
Dynamic Parameters
C
iss
Input Capacitance
153
191
pF
V
GS
= 0 V, V
DS
= 50 V
C
oss
Output Capacitance
74
107
pF
V
GS
= 0 V, V
DS
= 50 V
C
rss
Reverse Transfer Capacitance
0.7
1
pF
V
GS
= 0 V, V
DS
= 50 V
C
oss(er)
Energy Related Coss
97
pF
V
GS
= 0 V, V
DS
=0 to 50 V
C
oss(tr)
Time Related Coss
130
pF
V
GS
= 0 V, V
DS
=0 to 50 V
R
G
Gate Resistance
900
mΩ
Q
G
Total Gate Charge
1.40
1.75
nC
V
GS
= 5 V, V
DS
= 50 V,
I
D
= 4 A
Q
GS
Gate to Source Charge
340
pC
V
DS
= 50 V,I
D
= 4 A
Q
GD
Gate to Drain Charge
240
480
pC
V
DS
= 50 V,I
D
= 4 A
Q
G(TH)
Gate Charge at Threshold
200
pC
V
DS
= 50 V,I
D
= 4 A
Q
OSS
Output Charge
6.70
9.40
nC
V
DS
= 50 V, V
GS
= 0 V
Thermal Parameters
SYMBOL
PARAMETER
TYP
UNIT
R
θJC
Thermal Resistance, Junction to Case
1.36
˚C/W
R
θJB
Thermal Resistance, Junction to Board
19.6
˚C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1)
65
˚C/W
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.