Page 1
May, 2020
POWER THE FUTURE
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INN100W08—100V E-Mode GaN FET
Preliminary Datasheet 1.0
General Description
• Ultra High Switching Frequency
• Ultra Low R
DS
(on)
• Fast and Controllable Fall and Rise Time
• Zero Reverse Recovery Loss
• Protective Backside Coating
Applications
• High efficiency power conversion
• High density power conversion
• Motor Drive
• Industrial Automation
• DC-DC Converters
Maximum Ratings
Symbol
Parameter
Max
Unit
V
DS
Drain-to-Source Voltage (Continuous)
100
V
I
D
Continuous Current
4
A
Pulsed (25˚C, T
Pulse
= 100 µs)
50
A
V
GS
Gate-to-Source Voltage
6
V
Gate-to-Source Voltage
-4
V
T
J
Operating Temperatur6e
-40 to 150
˚C
T
STG
Storage Temperature
-40 to 150
˚C
Package: WLCSP 2X3
Size: 1.543mmX1.028mm
Page 2
May, 2020
POWER THE FUTURE
www.innoscience.com.cn
INN100W08—100V E-Mode GaN FET
Preliminary Datasheet 1.0
Electrical Characteristics (T
J
=25°C unless otherwise stated)
Symbol
Parameter
Min
Typ.
Max
Unit
Test Condition
Static Parameters
BV
DSS
Drain-to-Source Voltage
100
V
V
GS
= 0 V, I
D
= 60μA
I
DSS
Drain Source Leakage
10
40
µA
V
GS
= 0 V, V
DS
= 80V
I
GSS
Gate-to-Source Forward Leakage
1
1000
µA
V
GS
= 5 V
Gate-to-Source Reverse Leakage
1
40
µA
V
GS
= -4 V
V
GS(TH)
Gate Threshold Voltage
0.8
1.3
2.4
V
V
DS
= V
GS
, I
D
= 0.9mA
R
DS(on)
Drain-Source On Resistance
36
47
mΩ
V
GS
= 5 V, I
D
= 4A
V
SD
Source-Drain Forward Voltage
1.8
V
I
S
= 0.4A, V
GS
= 0 V
Dynamic Parameters
C
iss
Input Capacitance
153
191
pF
V
GS
= 0 V, V
DS
= 50V
C
oss
Output Capacitance
74.5
80
V
GS
= 0 V, V
DS
= 50V
C
rss
Reverse Transfer Capacitance
0.9
1.3
V
GS
= 0 V, V
DS
= 50V
C
oss(er)
Energy Related Coss
101
V
GS
= 0 V, V
DS
= 50V
C
oss(tr)
Time Related Coss
136
V
GS
= 0 V, V
DS
= 50V
R
G
Gate Resistance
900
mΩ
Q
G
Total Gate Charge
1.40
1.75
nC
V
GS
= 5V, V
DS
= 50V,
I
D
=4A
Q
GS
Gate to Source Charge
0.30
V
DS
= 50V,I
D
=4A
Q
GD
Gate to Drain Charge
0.25
0.50
V
DS
= 50V,I
D
=4A
Q
GD(TH)
Gate Charge at Threshold
0.20
V
DS
= 50V,I
D
=4A
Q
OSS
Output Charge
6.85
9.55
V
DS
= 50V,I
D
=4A
Thermal Parameters
SYMBOL
PARAMETER
TYP
UNIT
RθJA
Thermal Resistance, Junction to Case
0.5
˚C/W
RθJB
Thermal Resistance, Junction to Board
5
˚C/W
RθJC
Thermal Resistance, Junction to Ambient (Note 1)
62
˚C/W
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.