SLF8N60S/SLD8N60S/Assembly & Final Test Spec
1. Product Information
Wafer Name
MS8N60S
PKG Type
TO220F/ TO252
Net Die
ea
Die Q`ty
All good sample
Input Q`ty
All good sample
Require Q`ty
All good sample
2. Fabrication Information
FAB Site
Korea
Nano FAB
Wafer Front Metal
AL-SI-CU(3.8um)
Die Size
3810 * 2710um
Scribe line
60Um
Wafer Size
6 inch
Wafer Thickness
280±20um
Wafer Back Metal
Ti-Ni-Ag
Probe Reject
ink
Source-Pad-Size
1740 * 2180um
Gate--Pad-Size
372 * 534 um
3. Assembly condition
Sawing
Full Cut
D/B
Solder
W/B
Gate; Al 5mil * 1
Source; Al 10mil*1
Mold
Normal
Marking
Laser
Test
Yes
Marking Code
/
Lead Forming
No
Packing Condition
Tube /Reel
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Wire Bonding Diagram
Source Drain Gate
BOM
Chip size
Lead frame
Solder
Wire
Plating
3810x2710㎛
Bare Cu
Your compan
y
recipe
Gate : Al 5mil
Source : Al 10mil*1
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