SiC Power Module
BSM400D12P2G003
Application
Circuit diagram
Motor drive
Inverter, Converter
Photovoltaics, wind power generation.
Induction heating equipment.
Features
1) Low surge, low switching loss.
2) High-speed switching possible.
3) Reduced temperature dependence.
Construction
This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
1
3,4
2
5
6
8
9
7
10
11
NTC
D1 SS1 G1 TH1 TH2
G2 SS2
1
2
4
3
6 5
8 9
10 117
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© 2018 ROHM Co., Ltd. All rights reserved.
1/10
13.Feb.2018 - Rev.001
Datasheet
BSM400D12P2G003
Absolute maximum ratings (T
j
= 25°C)
Note 1)
Note 2)
Note 3)
Example of acceptable VGS waveform
G-S short
V
D-S short
Drain - Source Voltage
DC(Tc=60°C) VGS=0V
Ptot
Tjm
ax
Tjop
Visol
Vrms
2450
17
5
-40 to 150
I
D
Conditions
Gate
- Source Voltage (+)
Unit
A
DC(Tc=59℃) VGS=1
8V
Pulse (Tc = 60°C） 1ms VGS=18V
Note 2)
Pulse (Tc = 60°C） 1ms
VGS=0V
Note 2)
Tc = 25°C
Tstg
W
°C
Tj is less than 175°C.
Main Terminals : M6 screw
N ・m
Mounting to heat sink M5 screw
-
Case temperature (Tc) is defined on the surface of base plate just under the chips.
Repetition rate should be kept within the range where temperature rise if die should not
exceed Tjmax.
397
418
418
800
800
Source Current
Note 1)
Mounting Torque
Total
Power Dissipation
Note 3)
Max Junction Temperature
Junctio
n Temperature
Storage Temperature
Isolation Voltage
I
S
I
S
I
SRM
I
SRM
DC(Tc=60°C) VGS=18V
Termi
nals to baseplate f = 60Hz AC 1 min.
-40 to 125
2500
4.
5
3.5
V
DSS
V
GSS
V
GSS
V
GSSsurge
I
D
400
Parameter
Symbol
Drain Current
Note 1)
Ratings
1200
22
-6
-10
to 26
800
I
DRM
Pulse (Tc = 60°C） 1ms
VGS=18V
Note 2)
D-S short
D-S short
Gate - Source Voltage (-)
G - S Voltage (t
surge
<300nsec)
DC(Tc=60°C) VGS=18V
+22V
0V
-6V
-1
0V
+26V
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/10
13.Feb.2018 - Rev.001
Datasheet