71
N-Channel MOSFET and Low V
F
Schottky Diode ................................................................... 72
P-Channel MOSFET and Low V
F
Schottky Diode ................................................................... 72
Low V
CE(SAT)
Small Signal Transistor and Low V
F
Schottky Diode ................................... 73
Page
Multi Discrete Modules (MDMs)
Integrating different device types into a single package often facilitates assembly cost reductions.
MOSFETs and diodes, MOSFETs and rectifi ers, transistors and rectifi ers, and other custom
combinations are available.
72
SOT-563 Case
TLM832D Case
3.1 x 2.1 x 1.0
N-Channel MOSFET and Low V
F
Schottky Diode
P-Channel MOSFET and Low V
F
Schottky Diode
N-Channel MOSFET Low V
F
Schottky Diode
TYPE NO. CASE DESCRIPTION
BV
DSS
(V)
MIN
I
D
(mA)
MAX
r
DS(ON)
@ I
D
@ V
GS
(Ω) (A) (V)
MAX
V
GS(th)
(V)
MIN MAX
t
on,
t
off
(ns)
MAX
V
RRM
(V)
MAX
I
F
(mA)
MAX
V
F
@ I
F
(V)
(mA)
MAX
C
T
(pF)
MAX
CMLM0205 SOT-563
Combination:
N-Channel MOSFET and
Low V
F
Schottky diode
60 280
2.0
3.0
0.5
0.05
10
5.0
1.0 2.5 20
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM0574 SOT-563
Combination:
N-Channel MOSFET and
Low V
F
Schottky diode
30 450
0.46
0.56
0.73
0.2
0.1
0.075
4.5
2.5
1.8
0.5 1.0 – / –
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM0575 SOT-563
Combination:
N-Channel MOSFET and
Low V
F
Schottky diode
20 650
0.23
0.275
0.7
0.6
0.5
0.35
4.5
2.5
1.8
0.5 1.1
10, 25
(TYP)
+
40 500
0.27
0.35
0.47
10
100
500
50
CTLM7110-
M832D
TLM832D
Combination:
N-Channel MOSFET and
Low V
F
Schottky diode
20 1000
0.10
0.14
0.25
0.5
0.5
0.1
4.5
2.5
1.5
0.5 1.2
25, 140
(TYP)
+
40 1000
0.29
0.36
0.45
0.55
10
100
500
1000
–
1.7 x 1.7 x 0.6
MDM
™
Multi Discrete Module
P-Channel MOSFET Low V
F
Schottky Diode
TYPE NO. CASE DESCRIPTION
BV
DSS
(V)
MIN
I
D
(mA)
MAX
r
DS(ON)
@ I
D
@ V
GS
(Ω) (A) (V)
MAX
V
GS(th)
(V)
MIN MAX
t
on,
t
off
(ns)
MAX
V
RRM
(V)
MAX
I
F
(mA)
MAX
V
F
@ I
F
(V)
(mA)
MAX
C
T
(pF)
MAX
CMLM0584 SOT-563
Combination:
P-Channel MOSFET and
Low V
F
Schottky diode
30 450
1.1
2.0
3.3
0.43
0.2
0.1
4.5
2.5
1.8
0.5 1.0 – / –
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM0585 SOT-563
Combination:
P-Channel MOSFET and
Low V
F
Schottky diode
20 650
0.36
0.5
0.8
0.35
0.3
0.15
4.5
2.5
1.8
0.5 1.0
38, 48
(TYP)
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM0305 SOT-563
Combination:
P-Channel MOSFET and
Low V
F
Schottky diode
50 280
2.0
2.5
3.0
0.05
0.05
0.05
5.0
2.5
1.8
0.75 1.2 –
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM0305T SOT-563
Combination:
P-Channel MOSFET and
Low V
F
Schottky diode
50 280
1.5
1.9
2.3
0.05
0.05
0.05
5.0
2.5
1.8
0.75 1.2 –
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM8205 SOT-563
Combination:
P-Channel MOSFET and
Low V
F
Schottky diode
50 280
2.5
3.0
0.5
0.05
10
5.0
1.0 2.5 20
+
40 500
0.27
0.35
0.47
10
100
500
50
CTLM8110-
M832D
TLM832D
Combination:
P-Channel MOSFET and
Low V
F
Schottky diode
20 860
0.150
0.142
0.200
0.240
0.95
0.77
0.67
0.2
4.5
4.5
2.5
1.8
0.45 1.0
20, 25
(TYP)
+
40 1000 0.45 500 –
Package dimensions shown are maximum values in mm.
73
SOT-563 Case TLM832D Case
3.1 x 2.1 x 1.0
Low V
CE(SAT)
Small Signal Transistor and Low V
F
Schottky Diode
Low V
CE(SAT)
Small Signal Transistor Low V
F
Schottky Diode
TYPE NO. CASE DESCRIPTION
BV
CBO
(V)
MIN
BV
CEO
(V)
MIN
BV
EBO
(V)
MIN
V
CE(SAT)
@ I
C
(V) (mA)
TYP MAX
V
RRM
(V)
MAX
I
F
(mA)
MAX
V
F
@ I
F
(V)
(mA)
MAX
C
T
(pF)
MAX
CMLM0405 SOT-563
Combination:
Low V
CE(SAT)
General Purpose
NPN transistor and
Low V
F
Schottky diode
60 40 6.0
0.057
0.090
0.1
0.2
10
50
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM0605 SOT-563
Combination:
Low V
CE(SAT)
General Purpose
PNP transistor and
Low V
F
Schottky diode
60 40 6.0
0.05
0.10
0.1
0.2
10
50
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM0705 SOT-563
Combination:
Low V
CE(SAT)
General Purpose
PNP transistor and
Low V
F
Schottky diode
60 60 5.0
0.113
0.280
0.2
0.7
150
500
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM2205 SOT-563
Combination:
Low V
CE(SAT)
General Purpose
NPN transistor and
Low V
F
Schottky diode
100 45 6.0
0.09
0.12
0.15
0.50
150
500
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM3405 SOT-563
Combination:
Low V
CE(SAT)
General Purpose
NPN transistor and
Low V
F
Schottky diode
40 25 6.0 0.250 0.45 1000
+
40 500
0.27
0.35
0.47
10
100
500
50
CMLM7405 SOT-563
Combination:
Low V
CE(SAT)
General Purpose
PNP transistor and
Low V
F
Schottky diode
40 25 6.0 0.275 0.45 1000
+
40 500
0.27
0.35
0.47
10
100
500
50
CTLM1034-
M832D
TLM832D
Combination:
Low V
CE(SAT)
General Purpose
NPN transistor and
Low V
F
Schottky diode
40 25 6.0 0.250 0.45 1000
+
40 1000
0.29
0.36
0.45
0.55
10
100
500
1000
–
CTLM1074-
M832D
TLM832D
Combination:
Low V
CE(SAT)
General Purpose
PNP transistor and
Low V
F
Schottky diode
40 25 6.0 0.275 0.45 1000
+
40 1000
0.29
0.36
0.45
0.55
10
100
500
1000
–
1.7 x 1.7 x 0.6
MDM
™
Multi Discrete Module (continued)
Package dimensions shown are maximum values in mm.