SSPL6040D
©Silikron Semiconductor CO.,LTD. 2010.11.18 Version : 1.1 page 1 of 8
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Main Product Characteristics:
Features and Benefits:
Description:
Absolute max Rating:
Continuous Drain Current, V
GS
@ 10V①
Continuous Drain Current, V
GS
@ 10V①
Single Pulse Avalanche Energy @ L=1.0mH
Avalanche Current @ L=1.0mH
Operating Junction and Storage Temperature Range
Marking and pin
Assignment
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.