SSPL6040
©Silikron Semiconductor CO.,LTD. 2012.06.05 Version : 1.0 page 1 of 8
www.silikron.com
Main Product Characteristics:
Features and Benefits:
Description:
Absolute max Rating:
Symbol
Parameter
Max.
Units
I
D
@ TC = 25°C
Continuous Drain Current, V
GS
@ 10V①
38
A
I
D
@ TC = 100°C
Continuous Drain Current, V
GS
@ 10V①
27
I
DM
Pulsed Drain Current②
152
P
D
@TC = 25°C
Power Dissipation③
71
W
Linear Derating Factor
0.48
W/°C
V
DS
Drain-Source Voltage
60
V
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy @ L=0.67mH
127
mJ
I
AS
Avalanche Current @ L=0.67mH
19.5
A
T
J
T
STG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
V
DSS
60V
R
DS
(on)
34mΩ (typ.)
I
D
38A
TO-220
Marking and pin
Assignment
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
SSPL6040
©Silikron Semiconductor CO.,LTD. 2012.06.05 Version : 1.0 page 2 of 8
www.silikron.com
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
R
θJC
Junction-to-case③
—
2.1
℃/W
R
θJA
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Electrical Characterizes @T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source breakdown voltage
60
—
—
V
V
GS
= 0V, ID = 250μA
R
DS(on)
Static Drain-to-Source on-resistance
—
34
40
mΩ
V
GS
=10V,I
D
= 17A
—
61
—
T
J
= 125℃
V
GS(th)
Gate threshold voltage
2
—
4
V
V
DS
= V
GS
, I
D
= 250μA
—
2.5
—
T
J
= 125℃
I
DSS
Drain-to-Source leakage current
—
—
1
μA
V
DS
= 60V,V
GS
= 0V
—
—
50
T
J
= 125°C
I
GSS
Gate-to-Source forward leakage
—
—
100
nA
V
GS
=20V
—
—
-100
V
GS
= -20V
Q
g
Total gate charge
—
14.7
—
nC
I
D
= 17A,
V
DS
=48V,
V
GS
= 10V
Q
gs
Gate-to-Source charge
—
4.5
—
Q
gd
Gate-to-Drain("Miller") charge
—
5.6
—
t
d(on)
Turn-on delay time
—
9.9
—
ns
V
GS
=10V, VDD=30V,
R
L
=1.75Ω,
R
GEN
=13Ω
ID=17A
t
r
Rise time
—
6.3
—
t
d(off)
Turn-Off delay time
—
14.7
—
t
f
Fall time
—
3.9
—
C
iss
Input capacitance
—
593
—
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1MHz
C
oss
Output capacitance
—
156
—
C
rss
Reverse transfer capacitance
—
32.5
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
I
S
Continuous Source Current
(Body Diode)
—
—
38
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SM
Pulsed Source Current
(Body Diode)
—
—
152
A
V
SD
Diode Forward Voltage
—
0.88
1.3
V
I
S
=17A, V
GS
=0V, T
J
= 25°C
t
rr
Reverse Recovery Time
—
25.1
—
ns
T
J
= 25°C, I
F
=17A,
di/dt = 100A/μs
Q
rr
Reverse Recovery Charge
—
32.2
—
nC