SSPL2015D
©Silikron Semiconductor CO.,LTD. 2013.11.16 Version : 1.1 page 1 of 8
www.silikron.com
Main Product Characteristics
Features and Benefits
Description
Absolute Max Rating
Symbol
Parameter
Max.
Units
I
D
@ TC = 25°C
Continuous Drain Current, V
GS
@ 10V
18 ①
A
I
D
@ TC = 100°C
Continuous Drain Current, V
GS
@ 10V
13 ①
I
DM
Pulsed Drain Current ②
72
P
D
@TC = 25°C
Power Dissipation ③
150
W
Linear Derating Factor
1.0
W/°C
V
DS
Drain-Source Voltage
200
V
V
GS
Gate-to-Source Voltage
± 30
V
E
AS
Single Pulse Avalanche Energy @ L=1.58mH
348
mJ
I
AS
Avalanche Current @ L=1.58mH
21
A
T
J
T
STG
Operating Junction and Storage Temperature Range
-55 to +150
°C
V
DSS
200V
R
DS
(on)
0.13Ω(typ.)
I
D
18A ①
TO-252
Marking and Pin
Assignment
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
SSPL2015D
©Silikron Semiconductor CO.,LTD. 2013.11.16 Version : 1.1 page 2 of 8
www.silikron.com
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
R
θJC
Junction-to-case ③
—
1.0
°C /W
R
θJA
Junction-to-ambient (t ≤ 10s) ④
—
62
°C /W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
°C /W
Electrical Characteristics @T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source breakdown voltage
200
—
—
V
V
GS
= 0V, I
D
= 250μA
R
DS(on)
Static Drain-to-Source on-resistance
—
0.13
0.15
Ω
V
GS
=10V,I
D
=7.5A
—
0.27
—
T
J
= 125°C
V
GS(th)
Gate threshold voltage
2
—
4
V
V
DS
= V
GS
, I
D
= 250μA
—
2.26
—
T
J
= 125°C
I
DSS
Drain-to-Source leakage current
—
—
1
μA
V
DS
=200V,V
GS
= 0V
—
—
50
T
J
= 125°C
I
GSS
Gate-to-Source forward leakage
—
—
100
nA
V
GS
=20V
—
—
-100
V
GS
= -20V
Q
g
Total gate charge
—
27
—
nC
I
D
= 18A,
V
DS
=160V,
V
GS
= 10V
Q
gs
Gate-to-Source charge
—
6
—
Q
gd
Gate-to-Drain("Miller") charge
—
12
—
t
d(on)
Turn-on delay time
—
15
—
nS
V
GS
=10V, V
DD
=100V,
R
L
=5.55Ω,R
GEN
=25Ω
I
D
=18A
t
r
Rise time
—
65
—
t
d(off)
Turn-Off delay time
—
64
—
t
f
Fall time
—
57
—
C
iss
Input capacitance
—
1030
—
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1MHz
C
oss
Output capacitance
—
244
—
C
rss
Reverse transfer capacitance
—
57
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
I
S
Continuous Source Current
(Body Diode)
—
—
18 ①
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SM
Pulsed Source Current
(Body Diode)
—
—
72
A
V
SD
Diode Forward Voltage
—
0.9
1.3
V
I
S
=15A, V
GS
=0V, T
J
= 25°C
t
rr
Reverse Recovery Time
—
154
—
nS
T
J
= 25°C, I
F
=18A, di/dt =
100A/μs
Q
rr
Reverse Recovery Charge
—
965
—
nC