SSPL1010
©Silikron Semiconductor CO.,LTD. 2011.12.01 Version : 1.0 page 1 of 8
www.silikron.com
Main Product Characteristics:
Features and Benefits:
Description:
Absolute max Rating:
Symbol
Parameter
Max.
Units
I
D
@ TC = 25°C
Continuous Drain Current, V
GS
@ 10V
88 ①
A
I
D
@ TC = 100°C
Continuous Drain Current, V
GS
@ 10V
63 ①
I
DM
Pulsed Drain Current ②
352
P
D
@TC = 25°C
Power Dissipation ③
245
W
Linear Derating Factor
1.63
W/°C
V
DS
Drain-Source Voltage
100
V
V
GS
Gate-to-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy @ L=0.14mH
700
mJ
I
AS
Avalanche Current @ L=0.14mH
100
A
T
J
T
STG
Operating Junction and Storage Temperature Range
-55 to +175
°C
V
DSS
100V
R
DS
(on)
8.9mohm(typ.)
I
D
88A ①
TO220
Marking and pin
Assignment
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies
SSPL1010
©Silikron Semiconductor CO.,LTD. 2011.12.01 Version : 1.0 page 2 of 8
www.silikron.com
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
R
θJC
Junction-to-case ③
—
0.61
℃/W
R
θJA
Junction-to-ambient (t ≤ 10s)④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characterizes @T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source breakdown voltage
100
—
—
V
V
GS
= 0V, I
D
= 250μA
R
DS(on)
Static Drain-to-Source on-resistance
—
8.9
10
mΩ
V
GS
=10V,I
D
=58A
—
18.4
—
T
J
= 125°C
V
GS(th)
Gate threshold voltage
2
—
4
V
V
DS
= V
GS
, I
D
= 150μA
—
2.09
—
T
J
= 125°C
I
DSS
Drain-to-Source leakage current
—
—
1
μA
V
DS
=100V,V
GS
= 0V
—
—
50
T
J
= 125°C
I
GSS
Gate-to-Source forward leakage
—
—
100
nA
V
GS
=20V
-100
—
—
V
GS
= -20V
Q
g
Total gate charge
—
99.6
—
nC
I
D
= 120A,
V
DS
=60V,
V
GS
= 10V
Q
gs
Gate-to-Source charge
—
26.7
—
Q
gd
Gate-to-Drain("Miller") charge
—
35.7
—
t
d(on)
Turn-on delay time
—
19.2
—
nS
V
GS
=10V, V
DD
=68V,
R
L
=1.17Ω,
R
GEN
=4.1Ω
I
D
=58A
t
r
Rise time
—
20.5
—
t
d(off)
Turn-Off delay time
—
45.4
—
t
f
Fall time
—
7.2
—
C
iss
Input capacitance
—
5530
—
pF
V
GS
= 0V
V
DS
= 50V
ƒ =1MHz
C
oss
Output capacitance
—
440
—
C
rss
Reverse transfer capacitance
—
17
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
I
S
Continuous Source Current
(Body Diode)
—
—
88
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SM
Pulsed Source Current
(Body Diode)
—
—
352
A
V
SD
Diode Forward Voltage
—
0.87
1.5
V
I
S
=58A, V
GS
=0V, T
J
= 25°C
t
rr
Reverse Recovery Time
—
62.4
—
nS
T
J
= 25°C, I
F
=58A, di/dt =
100A/μs
Q
rr
Reverse Recovery Charge
—
186.2
—
nC