SSF3035L
©Silikron Semiconductor CO.,LTD. 2018.06.07 Version : 1.0 page 1 of 8
www.silikron.com
Main Product Characteristics:
V
DSS
-30V
R
DS
(on)
22mΩ (typ.)
I
D
-6A ①
Features and Benefits:
Description:
Absolute max Rating: @T
A
=25℃ unless otherwise specified
Symbol
Parameter
Max.
Units
I
D
@ TC = 25°C
Continuous Drain Current, V
GS
@ 10V ①
-6
A
I
D
@ TC = 70°C
Continuous Drain Current, V
GS
@ 10V ①
-5
I
DM
Pulsed Drain Current ②
-30
P
D
@TC = 25°C
Power Dissipation ③
2
W
V
DS
Drain-Source Voltage
-30
V
V
GS
Gate-to-Source Voltage
±20
V
T
J
T
STG
Operating Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
R
θJA
Junction-to-ambient (t ≤ 10s) ④
—
62.5
°C /W
Marking and pin
Assignment
Schematic diagram
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
SOT23-3
D
G
S
SSF3035L
©Silikron Semiconductor CO.,LTD. 2018.06.07 Version :1.0 page 2 of 8
www.silikron.com
Electrical Characterizes @T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source breakdown voltage
-30
—
—
V
V
GS
= 0V, I
D
= -250μA
R
DS(on)
Static Drain-to-Source on-resistance
—
22
30
mΩ
V
GS
=-10V,I
D
= -5.4A
—
33
40
V
GS
=-4.5V,I
D
= -4.6A
V
GS(th)
Gate threshold voltage
-1.2
—
-2.5
V
V
DS
= V
GS
, I
D
= -250μA
—
-1.45
—
T
J
= 125°C
I
DSS
Drain-to-Source leakage current
—
—
-1
μA
V
DS
= -30V,V
GS
= 0V
—
—
-50
T
J
= 125°C
I
GSS
Gate-to-Source forward leakage
—
—
100
nA
V
GS
=20V
—
—
-100
V
GS
= -20V
Q
g
Total gate charge
—
10
—
nC
I
D
= -6A,
V
DS
=-15V,
V
GS
= -4.5V
Q
gs
Gate-to-Source charge
—
3
—
Q
gd
Gate-to-Drain("Miller") charge
—
4
—
t
d(on)
Turn-on delay time
—
10.5
—
ns
V
GS
=-10V, V
DS
=-15V,
R
GEN
=3Ω,R
L
=2.7Ω
t
r
Rise time
—
5.4
—
t
d(off)
Turn-Off delay time
—
25
—
t
f
Fall time
—
8.5
—
C
iss
Input capacitance
—
1300
—
pF
V
GS
= 0V,
V
DS
=-25V,
ƒ = 1MHz
C
oss
Output capacitance
—
150
—
C
rss
Reverse transfer capacitance
—
132
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
I
S
Continuous Source Current
(Body Diode) ①
—
—
-6
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
SM
Pulsed Source Current
(Body Diode)
—
—
-30
A
V
SD
Diode Forward Voltage
—
-0.82
-1.2
V
I
S
=-4.3A, V
GS
=0V
D
G
S