SSF3036C
©Silikron Semiconductor CO.,LTD. 2012.02.02 Version : 1.0 page 1 of 6
www.silikron.com
Main Product Characteristics:
Features and Benefits:
Description:
Absolute max Rating:
Symbol
Parameter
Max.
Units
N-Channel
P-Channel
I
D
@ TC = 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
4 ①
-3.6 ①
A
I
DM
Pulsed Drain Current ②
16
-14.4
V
GS
Gate to source voltage
±12
±12
V
P
D
@TC = 25°C
Power Dissipation ③
2.1
1.3
W
T
J
T
STG
Operating Junction and Storage Temperature Range
-55 to + 150
-55 to + 150
°C
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
N-channel
P-Channel
R
θJA
Junction-to-ambient (t ≤ 5s) ④
—
60
95
℃/W
NMOS
PMOS
V
DSS
30V
-30V
R
DS
(on)
32.4mohm
61.6mohm
I
D
4A
-3.6A
Schematic diagram
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
DFN 3x2-8L
Bottom View
N-Channel Mosfet
P-Channel Mosfet
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF3036C
©Silikron Semiconductor CO.,LTD. 2012.02.02 Version : 1.0 page 2 of 6
www.silikron.com
Electrical Characterizes @T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Drain-to-Source breakdown voltage
N-channel
30
—
—
V
V
GS
= 0V, I
D
= 250μA
P-Channel
-30
—
—
V
GS
= 0V, I
D
= -250μA
R
DS(on)
Static Drain-to-Source on-resistance
N-channel
—
32.4
36
mΩ
V
GS
= 4.5V,I
D
= 4.8A
P-Channel
—
61.6
65
V
GS
= -4.5V,I
D
= -2.3A
V
GS(th)
Gate threshold voltage
N-channel
0.5
—
2
V
V
DS
= V
GS
, I
D
= 250μA
P-Channel
-0.5
—
-2
V
DS
= V
GS
, I
D
= -250μA
I
DSS
Drain-to-Source leakage current
N-channel
—
—
1
μA
V
DS
=30V,V
GS
= 0V
P-Channel
—
—
-1
V
DS
=-30V,V
GS
= 0V
I
GSS
Gate-to-Source forward leakage
N-channel
—
—
100
nA
V
GS
=12V
N-channel
-100
—
—
V
GS
= -12V
P-Channel
—
—
100
V
GS
=12V
P-Channel
-100
—
—
V
GS
=-12V
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
I
S
Continuous Source Current
N-channel
—
—
4
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
P-Channel
—
—
-3.6
I
SM
Pulsed Source Current
N-channel
—
—
16
A
P-Channel
—
—
-14.4
V
SD
Diode Forward Voltage
N-channel
—
0.82
1.2
V
IS=2.4A, VGS=0V
P-Channel
—
-0.85
-1.2
IS=-1.5A, VGS=0V