ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 1.0 Jul 2019
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Depletion-Mode Power MOSFET
General Features
➢ Depletion Mode (Normally On)
➢ Proprietary Advanced Planar Technology
➢ Rugged Polysilicon Gate Cell Structure
➢ ESD improved Capability
➢ Fast Switching Speed
➢ RoHS Compliant
➢ Halogen-free available
Applications
➢ Suppressing surge current
➢ Normally-on Switches
➢ Converters
➢ Synchronous Rectification
➢ Linear Amplifier
➢ Constant Current Source
➢ Protection Circuits
Ordering Information
Absolute Maximum Ratings T
A
=25℃ unless otherwise specified
Drain-to-Source Voltage
[1]
Derating Factor above 25℃
Gate Source ESD
IEC, C=150pF, R=330Ω
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
Operating and Storage Temperature Range
Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Thermal Resistance, Junction-to-Case