ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 1.0 May. 2016
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FTE15C35G
350V N+P Dual Channel MOSFETs
General Features
➢ Proprietary Advanced Planar Technology
➢ Rugged Polysilicon Gate Cell Structure
➢ Fast Switching Speed
➢ RoHS Compliant
➢ Halogen-free available
Applications
➢ Power Management
➢ Load Switch
➢ Motor Driver
Ordering Information
Part Number
Package
Marking
Remark
FTE15C35G
SOP-8
15C35
Halogen Free
Absolute Maximum Ratings(T
A
=25°C unless otherwise noted)
Symbol
Parameter
N channel
P channel
Unit
V
DSS
Drain-to-Source Voltage
[1]
350
-350
V
V
GS
Gate-to-Source Voltage
±20
±20
V
I
D
Continuous Drain Current
0.3
-0.2
A
I
DP
300us Pulsed Drain Current Tested
[2]
1.2
-0.8
A
P
D
Power Dissipation
2.5
W
T
J
and T
STG
Operating and Storage Temperature Range
-55 to 150
℃
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
FTE15C35G
Unit
R
θJA
Thermal Resistance, Junction-to-Ambient
50
℃/W
BV
DSX
R
DS(ON)
(Max.)
I
D
350V
15Ω
300mA
-350V
30Ω
-200mA
SOP-8
D2
D2
D1
D1
S1
G1
S2
G2
D1
S1
G1
D2
S2
G2
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FTE15C35G
Electrical Characteristics
N-channel
OFF Characteristics(T
A
=25°C unless otherwise noted)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
BV
DSX
Drain-to-Source Breakdown
Voltage
350
--
--
V
V
GS
=0V, I
D
=250µA
I
DSS
Drain-to-Source Leakage Current
--
--
1
µA
V
DS
=350V，V
GS
= 0V
--
--
100
µA
V
DS
=350V，V
GS
= 0V
T
J
=125℃
I
GSS
Gate-to-Source Leakage Current
--
--
20
µA
V
GS
=+20V, V
DS
=0V
--
--
-20
µA
V
GS
=-20V, V
DS
=0V
ON Characteristics(T
A
=25°C unless otherwise noted)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
R
DS(ON)
Static Drain-to-Source On-Resistance
--
8
15
Ω
V
GS
=10V，I
D
=300mA
[3]
V
GS(TH)
Gate Threshold Voltage
1
--
3
V
V
GD
=0V, I
D
=250µA
Dynamic Characteristics（Essentially independent of operating temperature）
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
C
ISS
Input Capacitance
--
32.58
--
pF
V
GS
=0V
V
DS
=25V
f=1.0MH
Z
C
OSS
Oput Capacitance
--
5.36
--
C
RSS
Reverse Transfer Capacitance
--
0.75
--
t
d(ON)
Turn-on Delay Time
--
14
--
ns
V
DD
= 25V, I
D
=-80mA
R
G
= 25Ohm
V
GS
= 10V~0V
t
rise
Rise Time
--
10
--
t
d(OFF)
Turn-off Delay Time
--
24
--
t
fall
Fall Time
--
36
--
Source-Drain Diode Characteristics(T
A
=25°C unless otherwise noted)
Symbol
Parameter
Min
Typ.
Max.
Units
Test Conditions
V
SD
Diode Forward Voltage
--
--
1.2
V
I
SD
=300 mA, V
GS
= 0 V