ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 1.0 May. 2019
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AESD12V04ZS
AESD12V04ZS Transient Voltage Suppressor
General Features
12V reverse stand-off voltage
Unidirectional & two-path configurations
��� ESD protection according to
IEC61000-4-2 air ±30kV，contact ±30kV
Ultra-low leakage current：I
R
﹤1nA typ
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Applications
Power supply protection
Power management
Audio and video equipment
Communication systems
Control signal lines protection
Ordering Information
Part Number
Marking
Package
Remark
AESD12V04ZS
12S
SOT-23
Halogen Free
Absolute Maximum Ratings T
A
=25℃ unless otherwise specified
Symbol
Parameter
Rating
P
pk
Peak pulse power(t
p
=8/20us)
80
I
pp
Peak pulse current(t
p
=8/20us)
4
V
ESD
ESD according to IEC61000-4-2 air discharge
±30
ESD according to IEC61000-4-2 contact discharge
±30
T
OP
Operation temperature
-55～150
T
L
Lead Temperature
260
T
STG
Storage Temperature
-55 to 150
Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device.
A
C
C
(Top View)
Anode
Cathode
Cathode
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AESD12V04ZS
Electrical Characteristics
T
A
=25℃ unless otherwise specified
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
V
RWM
Reverse stand-off voltage
--
--
12
V
I
R
Reverse leakage current
V
RWM
=12V
--
--
100
nA
V
BR
Reverse breakdown voltage
I
T
=1mA
13.3
--
16
V
V
F
Forward voltage
I
T
=10mA
0.8
V
V
CL
Clamping voltage
[1]
I
PP
= 1A, t
p
= 8/20us
--
17
--
V
I
PP
= 4A, t
p
= 8/20us
--
20
--
C
J
Junction capacitance
V
R
=0V, f =1MHz
--
20
--
pF
Notes:
[1] Non-repetitive current pulse, according to IEC61000-4-5.
Figure 1: Pulse wave form
Figure 2: Power derating curve
0
20
40
60
80
100
120
0 5 10 15 20 25 30
I
PP
-Peak Pulse Current-% of I
PP
t-Time-μs
Peak Value I
PP
t
r
e
-t
t
d
=t┃I
PP
/2
TEST
WAVEFORM
PARAMETERS
t
r
=8μs
t
d
=20μs
0
20
40
60
80
100
0 25 50 75 100 125 150
% Of Rated Power
T
L
-Lead Temperature-℃
Peak Pulse Power
8/20μs
Average Power