ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Aug. 2019
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DMZ1511E
Depletion-Mode Power MOSFET
General Features
➢ ESD improved Capability
➢ Depletion Mode (Normally On)
➢ Proprietary Advanced Planar Technology
➢ Rugged Polysilicon Gate Cell Structure
➢ Fast Switching Speed
➢ RoHS Compliant
➢ Halogen-free available
Applications
➢ Synchronous Rectification
➢ Normally-on Switches
➢ Linear Amplifier
➢ Converters
➢ Constant Current Source
➢ Telecom
Ordering Information
Part Number
Package
Marking
Remark
DMZ1511E
SOT-23
1511
Halogen Free
Absolute Maximum Ratings T
A
=25℃ unless otherwise specified
Symbol
Parameter
DMZ1511E
Unit
V
DSX
Drain-to-Source Voltage
[1]
150
V
V
DGX
Drain-to-Gate Voltage
[1]
150
V
I
D
Continuous Drain Current
0.1
A
I
DM
Pulsed Drain Current
[2]
0.4
P
D
Power Dissipation
0.50
W
V
GS
Gate-to-Source Voltage
±20
V
T
L
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
300
℃
T
J
and T
STG
Operating and Storage Temperature Range
-55 to 150
Caution: Stresses greater than those listed in the“Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
DMZ1511E
Unit
R
θJA
Thermal Resistance, Junction-to-Ambient
250
K/W
BV
DSX
R
DS(ON)
(Max.)
I
DSS,min
150V
25 Ω
100mA
Drain
Gate
Source
SOT-23
D
S
G
ARK Microelectronics Co., Ltd. www.ark-micro.com Rev. 2.0 Aug. 2019
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DMZ1511E
Electrical Characteristics
OFF Characteristics T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
BV
DSX
Drain-to-Source Breakdown Voltage
150
--
--
V
V
GS
=-5V, I
D
=250µA
I
D(OFF)
Drain-to-Source Leakage Current
--
--
10
µA
V
DS
=150V，V
GS
= -5V
--
--
1.0
mA
V
DS
=150V，V
GS
= -5V
T
J
=125℃
I
GSS
Gate-to-Source Leakage Current
--
--
20
uA
V
GS
=+20V, V
DS
=0V
--
--
20
V
GS
=-20V, V
DS
=0V
ON Characteristics T
A
=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
I
DSS
Saturated Drain-to-Source Current
100
--
--
mA
V
GS
=0V, V
DS
=25V
R
DS(ON)
Static Drain-to-Source On-Resistance
--
10
25
Ω
V
GS
=0V，I
D
=50mA
[3]
V
GS(OFF)
Gate-to-Source Cut-off Voltage
-3.3
--
-1.8
V
V
DS
=3V, I
D
=8µA
gfs
Forward Transconductance
--
0.24
--
S
V
DS
=10V, I
D
=50mA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
C
ISS
Input Capacitance
--
12.8
--
pF
V
GS
=-10V
V
DS
=25V
f=1.0MH
Z
C
OSS
Oput Capacitance
--
5.4
--
C
RSS
Reverse Transfer Capacitance
--
3.3
--
Q
G
Total Gate Charge
--
3
--
nC
V
GS
= -10V~0V
V
DS
=75V, I
D
=100mA
Q
GS
Gate-to-Source Charge
--
0.23
--
Q
GD
Gate-to-Drain (Miller) Charge
--
1.1
--
Resistive Switching Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
t
d(ON)
Turn-on Delay Time
--
7
--
ns
V
GS
= -10V~0V
V
DD
= 75V, I
D
=100mA
R
G
= 20Ohm
t
rise
Rise Time
--
16
--
t
d(OFF)
Turn-off Delay Time
--
25
--
t
fall
Fall Time
--
120
--