Power Amplifier, 2 W
27.5 - 31.5 GHz
Rev. V3
MAAP-011246
1
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0009231
1
Ordering Information
1,2
Part Number Package
MAAP-011246-TR0500 500 Piece Reel
MAAP-011246-1SMB Sample Board
Functional Schematic
Pin Configuration
3
Pin # Function Pin # Function
1 Ground 20 Ground
2 No Connection 21 RF Output
3 Ground 22 Ground
4 RF Input 23 No Connection
5 - 7 No Connection 24, 25 Ground
8, 9 Ground 26 Drain Voltage 4
10 Gate Voltage 27, 28 Drain Voltage 3
11 Gate Voltage 29 Drain Voltage 2
12 - 14 No Connection 30 No Connection
15 Drain Voltage 4 31 Drain Voltage 1
16, 17 Ground 32 Ground
18, 19 No Connection Paddle
4
Ground
3. MACOM recommends connecting all No Connection (N/C)
pins to ground.
4. The exposed pad centered on the package bottom must be
connected to RF, DC and thermal ground.
1. Reference Application Note M513 for reel size information.
2. All sample boards include 3 loose parts.
V
D
1
V
D
2
V
D
3
V
D
3
V
D
4
RF
IN
RF
OUT
V
D
4
V
G
V
G
11
1
2
3
4
5
6
10
13
12
1514
23
22
21
20
19
18
30
31
28
29
26
27
7
8
9 16
17
24
2532
GND
GND
N/C
GND
N/C
GND
GND
GND
N/C
N/C
N/C
N/C
N/C
N/C
N/C
GND
GND
N/C
N/C
GND
GND
GND
Features
High Gain: 23 dB
P1dB: 30 dBm
P
SAT
: 33 dBm
IM3 Level: -22 dBc @ P
OUT
27 dBm/tone
Power Added Efficiency: 24% at P
SAT
Lead-Free 5 mm AQFN 32-lead Package
RoHS* Compliant
Description
The MAAP-011246 is a 2 Watt, 4-stage power
amplifier assembled in a lead-free 5 mm 32-lead
AQFN plastic package. This power amplifier
operates from 27.5 to 31.5 GHz and provides 23 dB
of linear gain, 2 W saturated output power and 24%
efficiency while biased at 6 V.
The MAAP-011246 can be used as a power
amplifier stage or as a driver stage in higher power
applications. This device is ideally suited for VSAT
and 28 GHz PTP applications.
This product is fabricated using a GaAs pHEMT
process which features full passivation for enhanced
reliability.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
Power Amplifier, 2 W
27.5 - 31.5 GHz
Rev. V3
MAAP-011246
2
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0009231
2
Electrical Specifications: Freq. = 30 GHz, T
A
= +25°C, V
D
= 6 V, Z
0
= 50 Ω
Parameter Test Conditions Units Min. Typ. Max.
Gain P
IN
= 0 dBm dB 19 22 —
P
OUT
P
IN
= 15 dBm dBm 31.5 33 —
IM3 Level P
OUT
= 27 dBm / tone dBc — -22 —
Power Added Efficiency P
SAT
(P
IN
= 15 dBm) % — 24 —
Input Return Loss P
IN
= -20 dBm dB — 10 —
Output Return Loss P
IN
= -20 dBm dB — 14 —
Quiescent Current I
DQ
(see bias conditions, page 4 ) mA — 900 —
Current P
SAT
(P
IN
= 15 dBm) mA — 1450 —
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM Class 1A
devices.
Maximum Operating Ratings
Absolute Maximum Ratings
7,8
Parameter Rating
Input Power 15 dBm
Junction Temperature
5,6
+160°C
Operating Temperature -40°C to +85°C
Parameter Absolute Maximum
Input Power 20 dBm
Drain Voltage +6.5 V
Gate Voltage -3 to 0 V
Junction Temperature
9
+175°C
Storage Temperature -65°C to +125°C
7. Exceeding any one or combination of these limits may cause
permanent damage to this device.
8. MACOM does not recommend sustained operation near these
survivability limits.
9. Junction temperature directly effects device MTTF. Junction
temperature should be kept as low as possible to maximize
lifetime.
5. Operating at nominal conditions with junction temperature
≤ +160°C will ensure MTTF > 1 x 10
6
hours.
6. Junction Temperature (T
J
) = T
C
+ Ө
JC
* ((V * I) - (P
out
- P
IN
))
Typical thermal resistance (Ө
JC
) = 8°C/W.
a) For T
C
= +25°C,
T
J
= +79°C @ 6 V, 1.45 A, P
OUT
= 33.0 dBm, P
IN
= 15 dBm
b) For T
C
= +85°C,
T
J
= +136°C @ 6 V, 1.34 A, P
OUT
= 32.4 dBm, P
IN
= 15 dBm