Active Metal Brazed (AMB) Si
3
N
4
Substrates
Silicon nitride offers excellent mechanical properties (high
bending strength, high fracture toughness) and high thermal
conductivity that makes it an ideal substrate material for
high-reliable power electronics modules.
The outstanding mechanical robustness of Si
3
N
4
enables
brazing with thick Cu layers offering additional thermal
capacity to dissipate load peaks. Thus baseplates become
obsolete for certain applications.
AMB-Si
3
N
4
substrates combine best mechanical robustness
with excellent heat dissipation properties featuring very
high power densities. Optimal performance and reliability
can be achieved by using silver sintering, Die Top System
(DTS
®
) and Cu bonding technology. This setup also
enables utilizing the full potential of wide bandgap (WBG)
semiconductors (SiC, GaN).
For your specic needs, we identify the optimal material
combination from our broad product portfolio: metal
ceramic substrates with functional surfaces optimized for
our sintering, soldering and bonding solutions.
Key features of AMB-Si
3
N
4
Special features
§ Best in class reliability
§ Enables thick Cu layers (e.g. 0.8 mm)
§ Thinner ceramics vs. AIN achieving same thermal resistance
§ Thermal conductivity > 80 W/m∙K of Si
3
N
4
ceramic
§ Best quality functional surfaces, e.g. Ag nish optimized for
silver sintering technology
§ Pre-applied sinter / solder
Condura
®
.prime
Heraeus offers:
§ Reliable IATF 16949 certied supply of Condura
®
.prime
(as well as Condura
®
.classic & Condura
®
.extra)
§ Engineering Services (Simulation, Prototype Design & Assembly,
Testing and Qualication, Material Analysis)
§ To be your competent one-stop materials solutions partner!
*Picture: substrate layout by courtesy of Fraunhofer IISB
The data given here is valid. We reserve the right to make technical alterations. 05.2018/ Layout: HET-MarCom_HET61006-0519-2
The descriptions and engineering data shown here have been compiled by Heraeus using commonly-accepted procedures, in conjunction with modern testing equipment, and have been compiled as according to the latest factual knowledge in our
possession. The information was up-to date on the date this document was printed (latest versions can always be supplied upon request). Although the data is considered accurate, we cannot guarantee accuracy, the results obtained from its use, or
any patent infringement resulting from its use (unless this is contractually and explicitly agreed in writing, in advance). The data is supplied on the condition that the user shall conduct tests to determine materials suitability for particular application.
The Heraeus logo, Heraeus and Condura® are trademarks or registered trademarks of Heraeus Holding GmbH or its afliates. All rights reserved.
Heraeus Electronics
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63450 Hanau, Germany
www.heraeus-electronics.com
Americas
Phone +1 610 825 6050
electronics.americas@heraeus.com
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Phone +86 21 3357 5457
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Phone +65 6571 7677
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Europe, Middle East and Africa
Phone +49 6181 35 3069
+49 6181 35 3627
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SAM
No copper delamination observable in ultrasonic testing
§ Sinter paste LTS 338-28P2
§ 0.32 mm AMB-Si
3
N
4
with 0.3 mm Cu
§ AMB functional surface 0.15 µm Ag
Shear strength
High shear strength due to the strong and reliable bonding
of the silver sinter layer and optimized Ag nish of AMB-Si
3
N
4
§ Sinter paste LTS 338-28P2
§ 0.32 mm AMB-Si
3
N
4
with 0.3 mm Cu
§ AMB functional surface 0.15 µm Ag
Bending test
No die delamination, high bending strength
§ Sinter paste LTS 338-28P2
§ 0.32 mm AMB-Si
3
N
4
with 0.3 mm Cu
§ AMB functional surface 0.15 µm Ag
Physical properties ideal for high-reliable modules using Ag sintering / Die Top System
Testing — after 2,000 Thermal Cycles -40°C/+150°C
Sintering conditions: 10 MPa, 230 °C, 3 min