Photo transistors KODENSHI KOREA CORP
The ST-1CL3H is a high sensitivity NPN silicon
Dimensions
[Unit : mm]
phototransistor mounted in a 3Φ Low-cost ceramic
package, designed for use as low-cost detector
array in consumer and industrial applications.
Features
· Compact (Φ3mm)
· Wide angular response
· Low-cost
Applications
· Optical counters
· Optical detectors
· Floppy disk drives
· Encoders
Absolute Maximum Ratings
[T
A
= 25°C]
C-E Voltage
E-C Voltage
Collector current
Collector power dissipation
Operating temp
Storage temp
Soldering temp
*1
*1. For MAX.5 seconds at the position of 2mm from the package
Electro-Optical Characteristics
[T
A
= 25°C]
Spectral sensitivity
Peak wavelength
Half Angle
*2. Color temp = 2856K standard tungsten lamp
I
CEO
V
CEO
=10V
-
λ 480~1,000
Collector dark current
Light current
C-E saturation voltage
Switching speeds
Rise time
Fall time
5
1 200
V
CE
(sat)
tr
I
C
=0.2mA, 2,000lx
*2
nA
I
L
mA
V
CE
=3V, 1,000lx
*2
0.08 1.5 -
I
C
mA20
Parameter
P
C
mW
Tsol °C
75
-20~+90
V
ECO
V
±50 -
3.8 -
Typ. Max.
Topr. °C
λp
V
CC
=10V, I
C=
1mA
R
L
=100Ω
nm880
µsec
--
degrees∆Θ -
Unit.Symbol Conditions Min.
260
-30~+100Tstg. °C
ST-1CL3H
V
CEO
V
Symbol Unit
20
RatingParameter
nm
tf -
- 2.5 -
V
µsec
- 0.15 0.4
φ
φ
φ
②
①
②
①
- 1 -
Photo transistors KODENSHI KOREA CORP
ST-1CL3H
Collector current Vs.
Collector-Emitter voltage
Dark current Vs.
Ambient temperature
Input
Output
FP
I
CC
V
OUT
V
C
IR
L
90%
10%
tftr
※ Switching time measurement circuit
20
60
80
Power dissipation(PD)
100
40
80
Ambient temperature(Ta)
40
0
0 20 60 100 (℃)
(㎽)
p
Ta=25℃
Ta=25℃
V
CE
=3V
V
CE
=10V
Collector current(I )
Collector-Emitter Voltage(V )
0
0
2648
CE
(㎃)
C
(V)
1
2
3
4
Ev=3,000㏓
Ev=2,000㏓
Ev=500㏓
Ev=1,000㏓
5
Collector current(I )
10
(Lux)
C
Illminance(E )
10 10 10
1
234
10
-1
0
10
10
1
2
10
(mA)
V
Collector dark current(I )
40
Ambient temperature(Ta)
020
(℃)
8060 100
CEO
120
10
10
10
10
-1
0
1
2
Collector current Vs.
Illuminance
Relative sensitivity Vs.
Wavelength
Radiant PatternSwitching time Vs.
Load resistance
V
CC
= 10V
I
C
=1㎃
Ta = 25℃
tf
tr
td
Ta=25℃
80
Spectral Sensitivity
500
20
400
0
40
60
700
Wavelength( λ)
600 800 900 (㎚)1000 1100
100
(%)
Response time tr, tf
Road Resistance(R )
( )
(㎲)
10
10
10
10
0
1
2
3
10
2
1010
34
10
5
L
Ω
Angle(deg.)
Relative intensity(%)
+
1
0
0
5
0
1
0
0
0
+
8
0
+
2
0
+
6
0
+
4
0
5
0
0
1
0
0
5
0
-
1
0
0
Ta=25℃
-
6
0
-
2
0
-
4
0
-
8
0
Collector power dissipation Vs.
Ambient temperature
- 2 -