SuperPlanar
TM
Bridge Rectifiers GBU10J--GBU10K
GBS805AA www.gmesemi.com
Rev.B
Production specificat io n
Features
Planar pass iv at ed chips
Ultra low le akage reverse cur r ent
High temp er at ur e performance
High surge cur r ent capabil ity
Ideal for pri nt ed circuit boards
High temp er at ur e soldering guaranteed:2 60°C/10 seconds
RoHS Compliant
Mechanical Data
Case: GBU m old ed plastic
Molding compound, UL f la m m ability classif icat i on r ating 94V-0
Termina ls: Leads solderable per MI L-STD-750,
Mounting position: Any
Maximum Ra ti ngs
(@T
A
= 25°C unless otherwise specified)
Characteristic Symbol GBU10J GBU10K Units
Peak repetitive reverse voltage V
RRM
600 800 V
RMS reverse voltage V
RMS
420 560 V
DC blocking voltage V
DC
600 800 V
Maximum average forward output current I
F(AV)
10 A
Peak forward surge current,
8.3ms single half-sine-wave
@T
J
= 25°C I
FSM
220 A
I
2
t Rating for fusing @T
J
= 25°C I
2
t 200 A
2
s
Thermal Characteristics
Note:
(1) Unit case mounted on 65mm x 50mm x2.4mm aluminum plate heatsink
(2) Units mounted on PCB without heatsink
Parameter Symbol GBU10J GBU10K Units
Typical thermal resistance
(Note 1,Note2
)
R
ΘJA
(2)
R
ΘJC
(1)
35
°C /W
4.2
Operating junction temperature range T
J
- 55 ---- + 150 °C
Storage temperature range T
STG
- 55 ---- + 150 °C
SuperPlanar
TM
Bridge Rectifiers GBU10J--GBU10K
GBS805AA www.gmesemi.com
Rev.B
Production specificat io n
Electrical Characteristics (@T
A
= 25°C unless other wise speci fi ed)
Parameter Symbol Test conditions Typ. Max. Units
Maximum instantaneous
forward voltage
V
F
I
F
=5.0A Per Diode 0.92 0.96
V
I
F
=10A Per Diode 0.98 1.05
Maximum Reverse current I
R
Rated V
R
,
Per Diode
@T
A
=25°C 0.2 1.0
μ A
@T
A
=150°C 40 100