SEMICONDUCTOR
NST320S100C Series
RoHS
RoHS
FEATURES
PRODUCT SUMMARY
V
R
320A
100V
High Performance Schottky Rectifier
175°C T operation
J
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and
long term reliability
Lead (Pb)-free
Designed and qualified for industrial level
SOT-227 (Non-insulated)
MAJOR RATINGS AND CHARACTERISTICS
UNIT
l
FSM
I
F(AV)
A
CHARACTERISTICS
Rectangular waveform
A
t
p =
5 µs sine
160 Apk, T = 125°C
J
Range
SYMBOL VALUES
160 x 2
100
12000
0.80
-55 to 175
ºC
V
RRM
T
J
V
F
V
V
VOLTAGE RATINGS
UNIT
V
R
PARAMETER
Maximum DC reverse voltage
SYMBOL
NST320S100C
100
V
RWM
V
Maximum working peak reverse voltage
l
F(AV)
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Page 1 of 5
TYPICAL APPLICATIONS
High current switching power supplies
Plating power supplies
UPS system
Converters
Freewheeling diode
Welder
Reverse battery protection.
The NST320S100C Schottky rectifier module
series has been optimized for low reverse
leakage at high temperature.
The proprietary barrier technology allows
for reliable operation up to 175 °C junction
temperature.
DESCRIPTION
Nell High Power Products
320A/100V
Anode 2
Common
cathode
Anode 1
Anode 1 Anode 2
Base Plate
Common Cathode
International standard package SOT-227
Low I values
RM
ABSOLUTE MAXIMUM RATINGS
UNIT
l
FSM
I
F(AV)
A
SYMBOL
Maximum average forward current
per leg
A
Non- repetitive avalanche energy
PARAMETER
TEST CONDITIONS
160
12000
1400
11.3
mJ
l
AR
E
AS
VALUES
50% duty cycle at T = 100°C, rectangular waveform
C
1.5
Maximum peak one cycle non-repetitive
surge current
Repetitive avalanche current
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V applied
RRM
T =25°C, l
J
=15A, L=100μH
AS
Current decaying linearly to zero in 1 µs
f = 10 KHz, V =1.5xV typical
A R
ELECTRICAL SPECIFICATIONS
UNIT
(1)
V
FM
V
SYMBOL
Maximum forward voltage drop per leg
PARAMETER
TEST CONDITIONS
0.98
1.21
0.80
1.05
2
mA
(1)
l
RM
VALUES
30
pF
nH
V/µs
2500
6.0
10000
160A
320A
160A
320A
Maximum reverse leakage current per leg
T = 25°C
J
T = 125°C
J
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
C
T
L
S
dV/dt
Rated V
R
From top of terminal hole to mounting plane
V = 5 V (test signal range 100 kHz to 1 MHZ) 25°C
R DC
T = 25°C
J
T = 125°C
J
V = Rated V
R R
Note
(1) Pulse width < 500 µs, duty cycle < 2%
THERMAL-MECHANICAL SPECIFICATIONS
UNIT
SYMBOL
Maximum junction and storage temperature range
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Weight
T ,T
J Stg
R
thJC
R
thCS
MIN.
TYP.
MAX.
g(oz.)
ºC
ºC/W
175
0.30
-
-
30 (1.06)
-
-55
-
-
Mounting torque, ± 10%
to heatsink, M4
-
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Page 2 of 5
SEMICONDUCTOR
RoHS
RoHS
--
JEDEC SOT-227 module (Non-insulated)
Case style
Nell High Power Products
0.15
-
N∙m (lbf ∙ in)
1.1 (9.7)
1.1 (9.7)
NST320S100C Series
-
-
busbar, M4