Marktech devices are solely solid-state devices (there are no photomultiplier tubes in our product line,
although our products may supply similar functionality). Response rates can be as fast as 300 picoseconds.
Light levels that can be measured range from tens of photons to massive levels. Wavelengths can range
from 150nm to greater than 3000nm.
Each photodetector uses p-n or n-p junctions as part of either a photodiode or phototransistor construction,
effectively working as an inverse function from the typical operation of a light emitting diode. Depending on
the technology used, the detectors provide current response to specifi c ranges of light wavelength.
Detector Materials and Characteristics
The materials used may be silicon, GaP, or InGaAs. The P and N epitaxial layers of the wafer materials can
be optimized for specifi c customer specifi cations and desired characteristics, including minimum refl ection,
Optimized Responsivity low dark current, minimum series resistance, low capacitance, fast response, low
cross talk, and more. The detectors can be packaged in a variety of packages from metal can and standard
3mm and 5mm plastic packages, to surface-mount...or virtually any custom package assembly. Detector
applications range from simple door opening to the latest cancer PET scan system.
Detector Wavelengths
Available products have wavelengths varying from 150nm (UV) through the visible range (440 to 700nm),
through SWIR (short wavelength infrared) (up to 2600nm), and beyond to MWIR (medium wavelength IR)
(>3000nm). This link to our
online Product Selector Guide helps in the selection of the emitter wavelengths,
while also indicating compatible detectors. Tight binning by Marktech can provide uniform wavelength
characteristics to optimize the application and mating detectors’ sensitivities, providing process-controlled,
uniform product solutions.
Marktech Photodetector Variations:
• Silicon photodetectors (400nm to 1100nm): photovoltaic, photoconductive photodiodes, and
phototransistors
• Silicon avalanche photodiodes (400nm to 1100nm, with 800nm, 905nm optimization)
• UV detectors (150nm to 450nm)
• InGaAs PIN photodetectors (800nm to 2600nm) and SWIR (short wavelength IR) detectors (1050nm to
1720nm)
Products are also available in epitaxial wafer form, and can be packaged as photorefl ectors, arrays, and
hybrid parts. For part listing and additional information,
visit our detectors catalog.
Silicon Photodetectors (400nm to 1100nm):
Marktech’s silicon phototransistors can be utilized in applications requiring very high sensitivity, uniform