DF3A6.8LFV
2014-03-01
1
TOSHIBA Diodes for Protecting against ESD
DF3A6.8LFV
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• The mounting of two devices in an ultra-compact package enables a
reduction in the number of parts and in the mounting cost.
• Low terminal capacitance: C
T
= 6.0 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Power dissipation P
150* mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Zener voltage V
Z
I
Z
= 5 mA 6.5 6.8 7.1 V
Dynamic impedance Z
Z
I
Z
= 5 mA ⎯ ⎯ 50 Ω
Reverse current I
R
V
R
= 5 V ⎯ ⎯ 0.5 μA
Terminal capacitance
(between cathode and anode)
C
T
V
R
= 0 V, f = 1 MHz ⎯ 6.0 ⎯ pF
Unit: mm
JEDEC ⎯
JEITA ⎯
TOSHIBA 1-1Q1B
Weight: 1.5 mg (typ.)
0.5mm
0.45mm
0.45mm
1. CATHODE1
2. CATHODE2
3. ANODE
VESM
1.2±0.05
0.32±0.05
1
2
3
0.4
0.4
0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
Start of commercial production
2005-05