DF3A5.6LFV
2014-03-01
1
TOSHIBA Diodes for Protecting against ESD
DF3A5.6LFV
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• The mounting of two devices in an ultra-compact package enables a
reduction in the number of parts and in the mounting cost.
• Low terminal capacitance: C
T
= 8.0 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating
Unit
Power dissipation P
150* mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Zener voltage V
Z
I
Z
= 5 mA 5.3 5.6 6.0 V
Dynamic impedance Z
Z
I
Z
= 5 mA ⎯ 3 ⎯ Ω
Reverse current I
R
V
R
= 3.5 V ⎯ ⎯ 1.0 μA
Terminal capacitance
(between cathode and anode)
C
T
V
R
= 0 V, f = 1 MHz ― 8 ― pF
Unit: mm
JEDEC ⎯
JEITA ⎯
TOSHIBA 1-1Q1B
Weight: 1.5 mg (typ.)
0.5 mm
0.45 mm
0.45 mm
0.4 mm
1. CATHODE1
2. CATHODE2
3. ANODE
VESM
1.2±0.05
0.32±0.05
1
2
3
0.4
0.4
0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
Start of commercial production
2005-05
DF3A5.6LFV
2014-03-01
2
Guaranteed Level of ESD Immunity
Test Condition ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 8 kV
Criterion: No damage to device elements
Marking Equivalent Circuit
(top view)
6 4
1 μ
ZENER VOLTAGE VZ (V)
I
Z
– V
Z
0 1 8 10 7 5 2 3
10 μ
10 m
100 m
9
100 μ
1 m
ZENER CURRENT IZ (mA)
0
Ta = 25°C
f = 1 MHz
REVERSE VOLTAGE VR (V)
5
7
6
2 1
10
1
C
T
– V
R
3
4
TOTAL CAPACITANCE CT (pF)
AU
Q
1
Q2