DF5A6.8FU
2014-03-01 1
TOSHIBA Diodes for Protecting against ESD
DF5A6.8FU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Power dissipation P 200 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Zener voltage V
Z
I
Z
= 5 mA 6.4 6.8 7.2 V
Dynamic impedance Z
Z
I
Z
= 5 mA ― 10 25 Ω
Knee dynamic impedance Z
ZK
I
Z
= 0.5 mA ― 30 ― Ω
Reverse current I
R
V
R
= 5 V ― ― 0.5 μA
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
= 0, f = 1 MHz ― 45 ― pF
Guaranteed Level of ESD Immunity
Criterion: No damage to device elements
Unit: mm
JEDEC ⎯
JEITA ⎯
TOSHIBA 1-2V1B
Weight: 0.0062 g (typ.)
Test Condition ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±30kV
Start of commercial production
1998-05
DF5A6.8FU
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Marking Equivalent Circuit
(Top View)
CT - VR
10
100
02468
Ta=25°C
f=1MHz
TOTAL CAPACITANCE CT (pF)
REVERSE VOLTAGE VR (V)