DF3A6.8LFU
2014-03-01
1
TOSHIBA Diodes for Protecting against ESD
DF3A6.8LFU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
• The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
• Low terminal capacitance: C
T
= 6.0 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Power dissipation P
100 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Zener voltage V
Z
I
Z
= 5 mA 6.5 6.8 7.1 V
Dynamic impedance Z
Z
I
Z
= 5 mA ⎯ ⎯ 50 Ω
Knee dynamic impedance Z
ZK
I
Z
= 0.5 mA ⎯ ⎯ 100 Ω
Reverse current I
R
V
R
= 5 V ⎯ ⎯ 0.5 μA
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
= 0 V, f = 1 MHz ⎯ 6.0 ⎯ pF
Guaranteed Level of ESD Immunity
Test Condition ESD Immunity Level
IEC61000-4-2
(Contact discharge)
± 8 kV
Criterion: No damage to device elements
Unit: mm
JEDEC ⎯
JEITA ⎯
TOSHIBA 1-2P1A
Weight: 0.006 g (typ.)
Start of commercial production
1999-04
DF3A6.8LFU
2014-03-01
2
Marking Equivalent Circuit
(top view)
Zener voltage V
Z
(V)
I
Z
– V
Z
Zener current I
Z
(A)
0 1 8 10 6 7 4 5 2 3
1 μ
10 μ
10 m
100 m
9
100 μ
1 m
Forward voltage V
F
(V)
I
F
– V
F
Forward current I
F
(mA)
100
0.5
10
0.8 1.21 0.9 0.70.6
1
1.1
Reverse voltage V
R
(V)
C
T
– V
R
Total capacitance C
T
(pF)
0 5 8 7 6 2 1
10
3 4
Ta = 25°C
f = 1 MHz
1
CU