DF5A6.8CJE

2014-03-01 1

TOSHIBA Diodes for Protecting against ESD

DF5A6.8CJE

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

* This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

z The mounting of four devices on an ultra-compact package allows

the number of parts and the mounting cost to be reduced.

z Low Terminal capacitance (between Cathode and Anode)

: C

=23pF (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic Symbol Rating Unit

Power dissipation P 100 mW

Junction temperature T

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics

(Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Zener voltage V

= 5 mA 6.4 6.8 7.2 V

Dynamic impedance Z

= 5 mA ― ― 25 Ω

Reverse current I

= 5 V ― ― 0.5 μA

Terminal capacitance

(between Cathode and Anode)

= 0 V, f = 1 MHz ⎯ 23 ⎯ pF

Guaranteed Level of ESD Immunity

Test Condition ESD Immunity Level

IEC61000-4-2

(Contact discharge)

± 25 kV

Criterion: No damage to device elements

Unit: mm

1.CATHODE 1

2. ANODE

3.CATHODE2

4.CATHODE3

5.CATHODE4

JEDEC ⎯

JEITA ⎯

TOSHIBA 1-2W1A

Weight: 0.003 g (typ.)

Start of commercial production

2003-07