Copyright Ruichips Semiconductor Co., Ltd
Rev. D– SEP., 2012
www.ruichips.com
RU3560L
N-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
Applications
Symbol
Parameter
Rating
Unit
Common Ratings (T
A
=25°C Unless Otherwise Noted)
V
DSS
Drain-Source Voltage
40
V
V
GSS
Gate-Source Voltage
±20
T
J
Maximum Junction Temperature
175
°C
T
STG
Storage Temperature Range
-55 to 175
°C
I
S
Diode Continuous Forward Current
T
C
=25°C
50
A
Mounted on Large Heat Sink
I
DP
300μs Pulse Drain Current Tested
T
C
=25°C
200
①
A
I
D
Continuous Drain Current(V
GS
=10V)
T
C
=25°C
50
②
A
T
C
=100°C
40
P
D
Maximum Power Dissipation
T
C
=25°C
50
W
T
C
=100°C
25
R
θJC
Thermal Resistance-Junction to Case
3
°C/W
Drain-Source Avalanche Ratings
E
AS
③
Avalanche Energy, Single Pulsed
100
mJ
• 40V/50A,
RDS (ON) =13mΩ(Typ.)@VGS=10V
RDS (ON) =18mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Fast Switching and Fully Avalanche Rated
• Lead Free and Green Devices Available
(RoHS Compliant)
• Low Voltage Inverter Applications
Absolute Maximum Ratings
TO252
N-Channel MOSFET
Copyright Ruichips Semiconductor Co., Ltd
Rev. D– SEP., 2012
2
www.ruichips.com
RU3560L
Electrical Characteristics (T
A
=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU3560L
Unit
Min.
Typ.
Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250µA
40
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 40V, V
GS
=0V
1
µA
T
J
=85°C
30
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250µA
1.5
2
2.5
V
I
GSS
Gate Leakage Current
V
GS
=±20V, V
DS
=0V
±100
nA
R
DS(ON)
④
Drain-Source On-state Resistance
V
GS
= 10V, I
DS
=25A
13
18
mΩ
V
GS
= 4.5V, I
DS
=20A
18
28
mΩ
Notes: Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature. Current limited by
bond wire.
Limited by T
Jmax
, I
AS
=20A, V
DD
= 30V, R
G
= 50Ω , Starting T
J
= 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Diode Characteristics
V
SD
④
Diode Forward Voltage
I
SD
=25A, V
GS
=0V
1.2
V
trr
Reverse Recovery Time
ISD=25A, dlSD/dt=100A/µs
14
ns
Qrr
Reverse Recovery Charge
32
nC
Dynamic Characteristics
⑤
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
1.2
Ω
C
iss
Input Capacitance
VGS=0V,
VDS=20V,
Frequency=1.0MHz
980
pF
C
oss
Output Capacitance
160
C
rss
Reverse Transfer Capacitance
80
t
d(ON)
Turn-on Delay Time
VDD=20V, RL=15Ω,
IDS=25A, VGEN= 10V,
RG=6Ω
6
ns
t
r
Turn-on Rise Time
10
t
d(OFF)
Turn-off Delay Time
24
t
f
Turn-off Fall Time
5
Gate Charge Characteristics
⑤
Q
g
Total Gate Charge
VDS=20V, VGS= 10V,
IDS=25A
18
23
nC
Q
gs
Gate-Source Charge
2.5
Q
gd
Gate-Drain Charge
5