Symbol Parameter Rating Units
V
DS
Drain-Source Voltage 30 V
V
GS
Gate-Source Voltage
±20
V
I
D
@T
C
=25℃
Continuous Drain Current, V
GS
@ 10V
1
36
A
I
D
@T
C
=100℃
Continuous Drain Current, V
GS
@ 10V
1
26
A
I
DM
Pulsed Drain Current
2
58
A
EAS Single Pulse Avalanche Energy
3
70
mJ
I
AS
Avalanche Current
20
A
P
D
@T
C
=25℃
Total Power Dissipation
4
22
W
T
STG
Storage Temperature Range -55 to 150
℃
T
J
Operating Junction Temperature Range -55 to 150
℃
Symbol Parameter Typ. Max. Unit
R
θJA
Thermal Resistance Junction-Ambient (<10s)
1
--- 25
℃/W
R
θJA
Thermal Resistance Junction-ambient (Steady State)
1
--- 62
℃/W
R
θJC
Thermal Resistance Junction-Case
1
--- 5
℃/W
BVDSS RDSON ID
30V
16mΩ 36A
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
General Description
Features
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Absolute Maximum Ratings
Thermal Data
TO-252 Pin Configuration
Product Summery
The WSF3036 is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent R
DSON
and
gate charge for most of the synchronous buck
converter applications .
The WSF3036 meet the RoHS and Green
Product requirement , 100% EAS
guaranteed with full function reliability
approved.
Page 1
www.winsok.tw
Dec.2014
WSF3036
N-Ch MOSFET
Symbol Parameter Conditions Min. Typ. Max. Unit
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V , I
D
=250uA 30 --- --- V
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
Reference to 25℃ , I
D
=1mA
--- 0.023 ---
V/℃
V
GS
=10V , I
D
=10A ---
16
26
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=5A ---
25
38
mΩ
V
GS(th)
Gate Threshold Voltage 1.0 1.5 2.5 V
△V
GS(th)
V
GS(th)
Temperature Coefficient
V
GS
=V
DS
, I
D
=250uA
--- -5.2 ---
mV/℃
V
DS=
24V , V
GS
=0V , T
J
=25℃
--- --- 1
I
DSS
Drain-Source Leakage Current
V
DS=
24V , V
GS
=0V , T
J
=55℃
--- --- 5
uA
I
GSS
Gate-Source Leakage Current
V
GS
=±20V , V
DS
=0V
--- ---
±100
nA
gfs Forward Transconductance V
DS
=15V , I
D
=10A --- 10 --- S
R
g
Gate Resistance V
DS=
24V , V
GS
=0V , f=1MHz --- 2.5 ---
Ω
Q
g
Total Gate Charge (4.5V) ---
7.0
---
Q
gs
Gate-Source Charge ---
1.3
---
Q
gd
Gate-Drain Charge
V
DS=
20V , V
GS
=4.5V , I
D
=10A
---
2.4
---
nC
T
d(on)
Turn-On Delay Time ---
4.0
---
T
r
Rise Time ---
9.2
---
T
d(off)
Turn-Off Delay Time ---
21
---
T
f
Fall Time
V
DD
=12V , V
GS
=10V , R
G
=3.3Ω,
I
D
=5A
---
5.8
---
ns
C
iss
Input Capacitance ---
530
---
C
oss
Output Capacitance ---
65
---
C
rss
Reverse Transfer Capacitance
V
DS
=25V , V
GS
=0V , f=1MHz
---
50
---
pF
Symbol Parameter Conditions Min. Typ. Max. Unit
EAS Single Pulse Avalanche Energy
5
V
DD
=25V , L=0.1mH , I
AS
=10A
16 --- --- mJ
Symbol Parameter Conditions Min. Typ. Max. Unit
I
S
Continuous Source Current
1,6
--- ---
9.5
A
I
SM
Pulsed Source Current
2,6
V
G
=V
D
=0V , Force Current
--- ---
55
A
V
SD
Diode Forward Voltage
2
V
GS
=0V , I
S
=15A , T
j
=25℃
--- --- 1.2 V
Note :
1.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.
The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=10A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Guaranteed Avalanche Characteristics
Diode Characteristics
Electrical Characteristics (T
J
=25 ℃, unless otherwise noted)
Page 2
www.winsok.tw
Dec.2014
WSF3036
N-Ch MOSFET