V15P45S-M3
www.vishay.com
Vishay General Semiconductor
Revision: 25-Jan-2019
1
Document Number: 89343
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMD Photovoltaic Solar Cell Protection
TMBS
®
(Trench MOS Barrier Schottky) Rectifiers
Ultra Low V
F
= 0.31 V at I
F
= 5 A
DESIGN SUPPORT TOOLS
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 30 mm x 30 mm aluminum PCB
(2)
Free air, mounted on recommended copper pad area
(3)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
RRM
45 V
I
FSM
210 A
V
F
at I
F
= 15 A 0.42 V
T
J
max. 150 °C
Package SMPC (TO-277A)
Circuit configuration Single
K
2
1
eSMP
®
Series
SMPC (TO-277A)
Anode 1
Anode 2
Cathode
K
click logo to get started
Available
Models
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V15P45S UNIT
Device marking code 1545S
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward current
I
F
(1)
15
A
I
F
(2)
4.8
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
210 A
Junction temperature in DC forward current
without reverse bias, t 1 h
T
J
(3)
200 °C
Operating junction temperature range T
OP
-40 to +150 °C
Storage temperature range T
STG
-40 to +175 °C
V15P45S-M3
www.vishay.com
Vishay General Semiconductor
Revision: 25-Jan-2019
2
Document Number: 89343
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
Free air, mounted on recommended copper pad area; thermal resistance R
JA
- junction to ambient
(2)
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R
JM
- junction to mount
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
Notes
(1)
Mounted on 30 mm x 30 mm aluminum PCB; T
M
measured at the terminal of cathode band (R
JM
= 4 °C/W)
(2)
Free air, mounted on recommended copper pad area (R
JA
= 75 °C/W)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 5.0 A
T
A
= 25 °C
V
F
(1)
0.40 -
V
I
F
= 7.5 A 0.45 -
I
F
= 15 A 0.49 0.58
I
F
= 5.0 A
T
A
= 125 °C
0.31 -
I
F
= 7.5 A 0.34 -
I
F
= 15 A 0.42 0.51
Reverse current V
R
= 45 V
T
A
= 25 °C
I
R
(2)
- 1500 μA
T
A
= 125 °C 15 50 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V15P45S UNIT
Typical thermal resistance
R
JA
(1)
75
°C/W
R
JM
(2)
4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V15P45S-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
V15P45S-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
T
M
- Mount Temperature (°C)
18
4
0
0 75 150
DC Forward Current (A)
25 10050 125
8
2
T
M
= 116 °C
(1)
6
10
T
A
= 25 °C
(2)
16
14
12
T
L
Measured
at the Cathode Band Terminal
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
Average Forward Current (A)
11
6
0
06 18
Average Power Loss (W)
414
1
4
D = t
p
/T t
p
T
5
D = 0.8
3
102
2
81612
10
8
9
7