V40DL45
www.vishay.com
Vishay General Semiconductor
Revision: 15-Mar-2019
1
Document Number: 87790
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low-Voltage TMBS
®
(Trench MOS Barrier Schottky) Rectifier
Ultra Low V
F
= 0.26 V at I
F
= 5 A
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
I
F(AV)
40 A
V
RRM
45 V
I
FSM
240 A
V
F
at I
F
= 40 A (T
A
= 125 °C) 0.53 V
T
J
max. 150 °C
Package SMPD (TO-263AC)
Circuit configuration Single
Top View Bottom View
Anode 1
Anode 2
K
Cathode
eSMP
®
Series
SMPD (TO-263AC)
K
1
2
3
3
D
D
3
D
3D Models
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V40DL45 UNIT
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum average forward rectified current (fig. 1) I
F(AV)
(1)
40 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
240 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V40DL45
www.vishay.com
Vishay General Semiconductor
Revision: 15-Mar-2019
2
Document Number: 87790
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
(2)
Free air, without heatsink
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.38 -
V
I
F
= 20 A 0.47 -
I
F
= 40 A 0.58 0.66
I
F
= 5 A
T
A
= 125 °C
0.26 -
I
F
= 20 A 0.38 -
I
F
= 40 A 0.53 0.61
Reverse current V
R
= 45 V
T
A
= 25 °C
I
R
(2)
-5
mA
T
A
= 125 °C 36 125
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V40DL45 UNIT
Typical thermal resistance
R
JC
0.9
°C/W
R
JA
(1)(2)
45
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V40DL45-M3/I 0.54 I 2000/reel 13" diameter plastic tape and reel
V40DL45HM3_A/I
(1)
0.54 I 2000/reel 13" diameter plastic tape and reel
0
5
10
15
20
25
30
35
40
45
0 25 50 75 100 125 150
Average Forward Rectied Current (A)
Case Temperature (°C)
R
thJA
= 45 °C/W
R
thJA
= R
thJC
= 0.9 °C/W
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
0 5 10 15 20 25 30 35 40 45
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
T
D = t
p
/T
t
p