SSPL5505
55V N-Channel MOSFET
www.goodark.com Page 1 of 7 Rev.1.1
Main Product Characteristics
Features and Benefits
Description
Absolute Max Rating
Symbol
Parameter Max. Units
I
D
@ TC = 25°C Continuous Drain Current, V
GS
@ 10V 160
①
I
D
@ TC = 100°C Continuous Drain Current, V
GS
@ 10V 110
①
I
DM
Pulsed Drain Current
②
640
A
Power Dissipation
③
230 W
P
D
@TC = 25°C
Linear Derating Factor 1.5 W/°C
V
DS
Drain-Source Voltage 55 V
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy @ L=0.3mH 960 mJ
I
AS
Avalanche Current @ L=0.3mH 80 A
T
J
T
STG
Operating Junction and Storage Temperature Range -55 to +175 °C
V
DSS
55V
R
DS
(on)
4.5mohm(typ.)
I
D
160A
①
TO -220
Marking and Pin
Assignment
Schematic Diagram
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
SSPL5505
55V N-Channel MOSFET
www.goodark.com Page 2 of 7 Rev.1.1
Thermal Resistance
Symbol Characteristics Typ. Max. Units
R
θJC
Junction-to-case
③
— 0.65
℃/W
Junction-to-ambient (t ≤ 10s)
④
— 62
℃/W
R
θJA
Junction-to-Ambient (PCB mounted, steady-state)
④
—
40
℃/W
Electrical Characteristics
@T
A
=25℃
unless otherwise specified
Symbol
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source breakdown voltage
55 — — V V
GS
= 0V, I
D
= 250μA
— 4.5 5 V
GS
=10V,I
D
=75A
R
DS(on)
Static Drain-to-Source on-resistance
— 7.74 —
mΩ
T
J
= 125℃
2 — 4 V
DS
= V
GS
, I
D
= 150μA
V
GS(th)
Gate threshold voltage
— 2.0 —
V
T
J
= 125℃
— — 1 V
DS
=55V,V
GS
= 0V
I
DSS
Drain-to-Source leakage current
— — 50
μA
T
J
= 125℃
—
—
100 V
GS
=20V
I
GSS
Gate-to-Source forward leakage
-100
—
—
nA
V
GS
= -20V
Q
g
Total gate charge —
101.6
—
Q
gs
Gate-to-Source charge —
25.8 —
Q
gd
Gate-to-Drain("Miller") charge —
40.1 —
nC
I
D
= 75A,
V
DS
=30V,
V
GS
= 10V
t
d(on)
Turn-on delay time —
19.4 —
t
r
Rise time —
88.2 —
t
d(off)
Turn-Off delay time —
45.1 —
t
f
Fall time —
74.2 —
nS
V
GS
=10V, V
DD
=30V,
R
L
=0.4Ω,
R
GEN
=2.7Ω
I
D
=75A
C
iss
Input capacitance —
7128 —
C
oss
Output capacitance —
837 —
C
rss
Reverse transfer capacitance —
110 —
pF
V
GS
= 0V
V
DS
=50V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol Parameter Min. Typ.
Max. Units Conditions
I
S
Continuous Source Current
(Body Diode)
— — 160
①
A
I
SM
Pulsed Source Current
(Body Diode)
— — 640 A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
SD
Diode Forward Voltage — 0.87 1.3 V I
S
=75A, V
GS
=0V, T
J
= 25°C
t
rr
Reverse Recovery Time — 49.5 — nS
Q
rr
Reverse Recovery Charge — 93.8 — nC
T
J
= 25°C, I
F
=75A, di/dt =
100A/μs