MUR810 THRU MUR860
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Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B156
Rev.2.1, 29-Nov-14
Ultra-Fast Recovery Rectifier Diodes
Features
● High frequency operation
● High surge forward current capability
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
P
ackage: TO-220AC
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
■
Maximum Ratings
(T
a
=25℃ Unless otherwise specified
)
PARAMETER SYMBOL UNIT
MUR810 MUR815 MUR820 MUR840 MUR860
Device marking code
MUR810 MUR815 MUR820 MUR840 MUR860
Repetitive Peak Reverse Voltage
V
RRM
V
100 150 200 400 600
Average Rectified Output Current
@60Hz half sine-wave, R-load, Tc(FIG.1)
I
o
A
8
Surge(Non-repetitive)Forward Current
@60Hz half sine-wave,1 cycle, Ta=25℃
I
FSM
A
100
Current Squared Time @1ms≤t≤8.3ms Tj=25℃
I
2
t
A
2
s
41
Storage Temperature
T
stg
℃
-55 ~ +150
Junction Temperature
T
j
℃
-55 ~ +150
■Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER SYMBOL
UNIT TEST CONDIT IONS
MUR810 MUR815 MUR820 MUR840 MUR860
Maximum instantaneous forward
voltage drop per diode
V
FM
V
I
FM
=8.0A
0.975 1.3 1.5
Maximum DC reverse current at
rated DC blocking voltage per diode
I
RRM1
uA
V
RM
=V
RRM
T
a
=25℃
10
I
RRM2
V
RM
=V
RRM
T
a
=125℃
500
Reverse Recovery Time Trr
ns
I
F
=0.5A I
RM
=1A
I
RR
=0.25A
50
■
Thermal Characteristics (T
a
=25℃ Unless otherwise specified)
PARAMETER SYMBOL
UNIT
MUR810 MUR815 MUR820 MUR840 MUR860
Thermal Resistance Between junction and case
R
θJ-C
℃/W
2.0
COMPLIANT
RoHS