Surface Mount Multilayer Varistor
SV0603E5R5G0B
SOCAY Electronics Corp., Ltd.
www.socay.com
@ SOCAY Electronics Corp., Ltd. 2018
Specifications are subject to change without notice.
Please refer to www.socay.com for current information.
1 / 5
Revision September 26, 2018
Features
Equivalent Circuits
Applications
Description
The SV0603E5R5G0B is based on Multilayer fabrication
technology. These components are designed to suppress a
variety of transient events, including those specified in IEC
61000-4-2 or other standards used for Electromagnetic
Compliance (EMC). The SV0603E5R5G0B is typically applied
to protect integrated circuits and other components at the
circuit board level. It can operate over a wider temperature
range than zener diodes.
Lead Free type
SMD type zinc oxide based ceramic chip
Insulator over coat keeps excellent low and stable
leakage current
Plating termination provided good solderability
characteristic
Quick response time (<1ns)
Low clamping voltage
Meet IEC61000-4-2 standard
Low capacitance can meet high speed single transient
voltage protection
Low capacitance product applications for high-speed
signal lines such as HDMI, DVI, USB, IEEE 1394 Port
etc.
Normal capacitance product applications for I/O Port
(RS232, USB, PS2, VGA, Audio) on Mother Board and
Notebook, Set–Top Box, MP3 Players, DVD Players,
and Docking System etc.
Surface Mount Multilayer Varistor
SV0603E5R5G0B
SOCAY Electronics Corp., Ltd.
www.socay.com
@ SOCAY Electronics Corp., Ltd. 2018
Specifications are subject to change without notice.
Please refer to www.socay.com for current information.
2 / 5
Revision September 26, 2018
Electrical Characteristics (25±5℃)
Symbol
Minimum
Typical
Maximum
Units
V
DC
—
—
5.5
V
V
V
7.6
—
12
V
V
C
—
—
25
V
C
P
—
5
—
pF
V
DC
– Maximum DC operating voltage the varistor can maintain and not exceed 10μA leakage current.
V
V
– Voltage across the device measure at 1mA DC current.
Equivalent to V
B
“breakdown voltage”
V
C
– Maximum peak current across the varistor with 8/20μs waveform and 1A pulse current.
C
P
– Device capacitance measured with zero volt bias 1Vrms at 1MHz. The pF is ±40%.